High Current N Channel Enhancement MOSFET MIRACLE POWER MU3012D with 30V Drain Source Voltage Rating

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Product Description

Product Overview

The MU3012D is an N-Channel Enhancement Mode MOSFET featuring Miracle Technology. It offers a 30V drain-source voltage and 100A continuous drain current, with a typical RDS(ON) of 2.9m at VGS = 10V. This MOSFET utilizes advanced trench technology for excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Technology: Advanced Trench Technology
Mode: N-Channel Enhancement Mode
Lead Free: Yes

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				30	V
VGS	Gate-Source Voltage				20	V
ID	Drain Current-Continuous (TC =25C)				100	A
ID	Drain Current-Continuous (TC =100C)				63	A
IDM	Drain Current-Pulsed				400	A
PD	Maximum Power Dissipation (@ TJ =25C)				78	W
EAS	Single Pulsed Avalanche Energy				175	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			1.6		C/W
RJA	Thermal Resistance, Junction to Ambient			32		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	30	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 30V, VGS = 0V	-	-	1	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.3	1.9	2.5	V
RDS(on)	Static Drain-Source On- Resistance	VGS = 10V, ID = 30A	-	2.9	3.6	m
RDS(on)	Static Drain-Source On- Resistance	VGS = 4.5V, ID = 20A	-	4.7	6.1	m
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15V, VGS = 0V, f = 1MHz	-	3089	-	pF
Coss	Output Capacitance		-	372	-	pF
Crss	Reverse Transfer Capacitance		-	302	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3	-	11	-	ns
tr	Turn-On Rise Time		-	29	-	ns
td(off)	Turn-Off Delay Time		-	47	-	ns
tf	Turn-Off Fall Time		-	18	-	ns
Qg	Total Gate Charge	VDS = 15V, VGS = 0 to 10V, ID = 30A	-	58	-	nC
Qgs	Gate-Source Charge		-	12	-	nC
Qgd	Gate-Drain Charge		-	13	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VGS = 0V	-	-	100	A
ISM	Maximum Pulsed Current	VGS = 0V	-	-	400	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 30A	-	-	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 30A, di/dt = 100A/s	-	16	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 30A, di/dt = 100A/s	-	7	-	nC