N Channel MOSFET MIRACLE POWER MU3010X with 30V Drain Source Voltage and Thermal Characteristics
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Product Description
Product Overview
The MU3010X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing a robust solution with a 30V drain-source voltage and a continuous drain current of 40A. Its lead-free construction and efficient thermal characteristics make it a reliable choice for demanding electronic designs.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Lead Free: Yes
Technical Specifications
| Absolute Maximum Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Rating | Unit |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Drain Current-Continuous (TC = 25°C) | 40 | A |
| ID | Drain Current-Continuous (TC = 100°C) | 26 | A |
| IDM | Drain Current-Pulsed | 160 | A |
| PD | Maximum Power Dissipation (@ TJ =25°C) | 35 | W |
| EAS | Single Pulsed Avalanche Energy | 100 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | °C |
| Thermal Characteristics | |||
|---|---|---|---|
| Symbol | Parameter | Value | Unit |
| RθJC | Thermal Resistance, Junction to Case | 3.6 | °C/W |
| RθJA | Thermal Resistance, Junction to Ambient | 43 | °C/W |
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Condition | Typ. | Unit |
| Off Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250µA | 30 | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | 1 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | ±100 | nA |
| On Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250µA | 1.6 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | 4.6 | mΩ |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 10A | 6.6 | mΩ |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1MHz | 1788 | pF |
| Coss | Output Capacitance | 225 | pF | |
| Crss | Reverse Transfer Capacitance | 180 | pF | |
| Switching Characteristics | ||||
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 30A, RGEN = 3Ω | 7 | ns |
| tr | Turn-On Rise Time | 14 | ns | |
| td(off) | Turn-Off Delay Time | 34 | ns | |
| tf | Turn-Off Fall Time | 11 | ns | |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 30A | 34 | nC |
| Qgs | Gate-Source Charge | 6.5 | nC | |
| Qgd | Gate-Drain Charge | 7.5 | nC | |
| Drain-Source Diode Characteristics | ||||
| IS | Drain-Source Diode Forward Continuous Current | 40 | A | |
| ISM | Maximum Pulsed Current | 160 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, di/dt = 100A/µs | 10 | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, di/dt = 100A/µs | 1.7 | nC |
| Package Information (PDFN3x3) | |||
|---|---|---|---|
| Symbol | Min | Typ | Max |
| A | 0.725 | 0.775 | 0.825 |
| B | 0.28 | 0.38 | 0.48 |
| C | 0.13 | 0.15 | 0.20 |
| D | 3.05 | 3.15 | 3.25 |
| D1 | 0.10 | ||
| E | 3.25 | 3.35 | 3.45 |
| E1 | 3.0 | 3.1 | 3.2 |
| e | 0.60 | 0.65 | 0.70 |
| F | 0.25 | 0.30 | 0.35 |
| H | 1.63 | 1.73 | 1.83 |
| L | 2.35 | 2.45 | 2.55 |
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