P channel MOSFET Minos MP11P20 ideal for SMPS and general purpose switching in electronic circuits
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Product Description
Product Description
The MP11P20 is a P-channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology reduces conduction losses, improves switching performance, and enhances avalanche energy. It is suitable for applications such as Switch Mode Power Supply (SMPS), high-speed switching, and general-purpose use. Key features include fast switching, 100% avalanche testing, and improved dv/dt capability.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos (implied from contact information)
- Material: Silicon
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-Source Voltage | VDSS | VGS = 0V | -200 | V |
| Continuous Drain Current | ID | TC = 25 | -11 | A |
| Pulsed Drain Current | IDM | (note1) | -44 | A |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Single Pulse Avalanche Energy | EAS | (note2) | 165 | mJ |
| Avalanche Current | IAS | (note1) | -11 | A |
| Power Dissipation | PD | TC = 25 | 78 | mJ |
| Linear Derating Factor | 0.6 | W/ | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 1.6 | K/W | |
| Thermal Resistance, Junction-to-Ambient | RthJA | 50 | K/W | |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | -200 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -200V, VGS = 0V, TJ = 25 | -- | 5 µA |
| Gate-Source Leakage | IGSS | VGS = ±20V | -- | ±120 nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -2 -- -4 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = -10V, ID = -6.6A (Note3) | 0.34 -- 0.42 | Ω |
| Input Capacitance | Ciss | VGS = 0V, VDS =-25V, f = 1.0MHz | -- 1200 | pF |
| Output Capacitance | Coss | -- 370 | pF | |
| Reverse Transfer Capacitance | Crss | -- 81 | pF | |
| Total Gate Charge | Qg | VDD =-100V, ID = -13.5A, VGS = -10V | -- 52 68 | nC |
| Gate-Source Charge | Qgs | -- 9 | -- | |
| Gate-Drain Charge | Qgd | -- 25 | -- | |
| Turn-on Delay Time | td(on) | VDD = -160V, ID =-13.5A, RG = 25 Ω | -- 28 56 | ns |
| Turn-on Rise Time | tr | -- 74 148 | ||
| Turn-off Delay Time | td(off) | -- 260 520 | ||
| Turn-off Fall Time | tf | -- 120 240 | ||
| Continuous Body Diode Current | IS | TC = 25 | -- -- -11 | A |
| Pulsed Diode Forward Current | ISM | -- -- -44 | ||
| Body Diode Voltage | VSD | TJ = 25, ISD = -11A, VGS = 0V | -- -- -5 | V |
| Reverse Recovery Time | trr | VGS = 0V, IS = -11A, diF/dt =100A /μs | -- 250 300 | ns |
| Reverse Recovery Charge | Qrr | -- 2.9 3.6 | μC |
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