N Channel Enhancement Mode MOSFET MIRACLE POWER MJQ30N65 with 650V Breakdown Voltage and 30A Current
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Product Description
Product Overview
The MJQ30N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring Advanced Super Junction Technology for easy gate switching control. Designed for high-performance applications, it offers a 650V breakdown voltage, 30A continuous drain current, and a low on-resistance of 0.095 (Typ.) at VGS = 10V. This enhancement mode MOSFET is ideal for use in UPS, EV Charging, Solar Inverters, and Server/Telecom Power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
- Mode: Enhancement Mode
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 650V, 30A | 0.095 | |||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | 4.2 | V | |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous | TC =25C | 30 | A | ||
| IDM | Drain Current-Pulsed | 90 | A | |||
| PD | Maximum Power Dissipation | TJ = 25C | 277.8 | W | ||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 2528 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.45 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10mA | 655 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | 1 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | 100 | nA | ||
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 15A | 0.095 | 0.11 | ||
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | 13.4 | |||
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | 2497 | pF | ||
| Coss | Output Capacitance | 239 | pF | |||
| Crss | Reverse Transfer Capacitance | 6.75 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 10V, ID = 25A, RG = 2 | 23 | ns | ||
| tr | Turn-On Rise Time | 28 | ns | |||
| td(off) | Turn-Off Delay Time | 108.4 | ns | |||
| tf | Turn-Off Fall Time | 24 | ns | |||
| Qgs | Gate-Source Charge | VDD = 400V, VGS = 0 to 10V, ID = 25A | 7.1 | nC | ||
| Qgd | Gate-Drain Charge | 20 | nC | |||
| Qg | Total Gate Charge | 52 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | 0.69 | V | ||
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 25A, dIF/dt = 100A/s | 380.8 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 25A, dIF/dt = 100A/s | 8.8 | C | ||
| Irrm | Peak reverse recovery current | VR = 400V, IF = 25A, dIF/dt = 100A/s | 45.2 | A | ||
Package Information: TO-247-3L
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