Low resistance Minos AO3401S MOSFET with trench technology ensuring high current handling and operation

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Product Description

Product Overview

The AO3401S is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 2.5V. It is suitable for load switch and general applications, providing high power and current handling capability.

Product Attributes

Brand: Shenzhen Minos (implied by website and contact)
Origin: China (implied by contact information)
Certifications: RoHS Compliant, Lead-free termination

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250uA	-30			V
Gate-Threshold Voltage	Vth(GS)	VDS=VGS, ID=-250uA	-0.7	-1.3		V
Gate-body Leakage	IGSS	VDS=0V, VGS=10V			100	nA
Zero Gate Voltage Drain Current	IDSS	VDS=-24V, VGS=0V		-1		uA
Drain-Source On-Resistance	RDS(ON)	VGS=-10V, ID=-4.2A		45	55	m
		VGS=-4.5V, ID=-4A		51	68	m
		VGS=-2.5V, ID=-1A		65	88	m
Forward Transconductance	gFS	VDS=-5V, ID=-4.2A		10		S
Capacitance	Ciss	VDS=-15V, VGS=0V, F=1MHz		880		pF
	Coss			105		pF
	Crss			65		pF
Switching Characteristics	td(on)	VDD= -15V, ID=-4.2A, VGS= -10V, RGEN=6		7		nS
	tr			3		nS
	td(off)			30		nS
	tf			12		nS
Gate Charge	Qg	VDS= -15V, ID=-4.2A, VGS=-4.5V		8.5		nC
	Qgs			1.8		nC
	Qgd			2.7		nC
Diode Forward Voltage	VSD	VGS =0V, ID=-4.2A		-1.2		V
Diode Forward Current	Is			-4.2		A
Continuous Drain Current	ID	TA=25		-4.2		A
Pulsed Drain Current	IDM			-20		A
Maximum Power Dissipation	PD	TA=25		1.2		W
Junction and Storage Temperature Range	TJ, TSTG		-55		150
Thermal Resistance, Junction to Ambient	RQJA			104		/W