N Channel MOSFET MIRACLE POWER MU3001X 30V 64A Continuous Drain Current Low On Resistance

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Product Description

Product Overview

The MU3001X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a 30V drain-source voltage and a continuous drain current of 64A at 25C, with a low on-resistance of 4.1m (typ.) at VGS = 10V. This device is characterized by its reliable and rugged design, fast switching speed, and is 100% EAS guaranteed. A green device option is also available.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Enhancement Mode MOSFET
Technology: Miracle Technology
Availability: Green Device Available

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage	Tc = 25C unless otherwise noted	-	-	30	V
VGS	Gate-Source Voltage	Tc = 25C unless otherwise noted	-	-	± 20	V
ID	Drain Current-Continuous, Tc =25C	Tc = 25C unless otherwise noted	-	-	64	A
ID	Drain Current-Continuous, Tc =100C	Tc = 25C unless otherwise noted	-	-	40	A
IDM	Drain Current-Pulsed	a	-	-	71	A
EAS	Avalanche Energy, Single pulse	b	-	39	-	mJ
IAS	Avalanche Current	b	-	28	-	A
PD	Maximum Power Dissipation @ Tc =25C	Tc = 25C unless otherwise noted	-	-	31	W
TSTG	Store Temperature Range	Tc = 25C unless otherwise noted	-55	-	150	C
TJ	Operating Junction Temperature Range	Tc = 25C unless otherwise noted	-55	-	150	C
Thermal Characteristics
RJC	Thermal Resistance Junction-Case	Max	-	-	4	C/W
RJA	Thermal Resistance Junction-Ambient	Maxc	-	-	60	C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	30	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 24V, VGS = 0V	-	-	1	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = ±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID =250A	1.1	-	2.1	V
RDS(on)	Static Drain-Source On- Resistance	VGS = 10V, ID = 20A	-	4.1	4.8	m
RDS(on)	Static Drain-Source On- Resistance	VGS = 4.5V, ID = 18A	-	5.3	6.9	m
gfs	Forward Transconductance	VDS= 5V, ID= 20A	-	22	-	S
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15V, VGS = 0V, f = 1.0MHz	-	1859	-	pF
Coss	Output Capacitance	VDS = 15V, VGS = 0V, f = 1.0MHz	-	260	-	pF
Crss	Reverse Transfer Capacitance	VDS = 15V, VGS = 0V, f = 1.0MHz	-	212	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDS = 15V, ID =1A, RG = 6,VGS=10V	-	9.6	-	ns
tr	Turn-On Rise Time	VDS = 15V, ID =1A, RG = 6,VGS=10V	-	23.4	-	ns
td(off)	Turn-Off Delay Time	VDS = 15V, ID =1A, RG = 6,VGS=10V	-	62.8	-	ns
tf	Turn-Off Fall Time	VDS = 15V, ID =1A, RG = 6,VGS=10V	-	23	-	ns
Qg	Total Gate Charge	VDS = 25V, ID = 14A, VGS = 4.5V	-	26	-	nC
Qg	Total Gate Charge	VDS = 25V, ID = 14A, VGS = 10V	-	48	-	nC
Qgs	Gate-Source Charge	VDS = 25V, ID = 14A, VGS = 10V	-	3.4	-	-
Qgd	Gate-Drain Charge	VDS = 25V, ID = 14A, VGS = 10V	-	14	-	-
Drain-Source Diode Characteristics
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, ISD = 1A	-	-	1.1	V
trr	Reverse Recovery Time	IF= 2A, di/dt=100A/us, TJ=25C	-	18.2	-	ns
Qrr	Reverse Recovery Charge	IF= 2A, di/dt=100A/us, TJ=25C	-	9.2	-	nC