650V 12A N Channel MOSFET MIRACLE POWER MPP12N65 Designed for LCD Panel Power and Switching Supplies
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPP12N65 is a 650V, 12A N-Channel Power MOSFET from Miracle Technology Co., Ltd. Engineered with Miracle Technology, it features a low Crss, fast switching speeds, and is 100% avalanche tested. This MOSFET is ideal for applications such as adapters, LCD panel power, E-bike chargers, and switching mode power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | VGS = 10V | 0.65 | ||||
| 650V, 12A | ||||||
| Low Crss | ||||||
| Fast Switching | ||||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | TC = 25C unless otherwise noted | 650 | V | ||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 12 | A | |||
| ID | Drain Current-Continuous, TC =100C | 7.5 | A | |||
| IDM | Drain Current-Pulsed | b | 48 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 120 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 500 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 1.04 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics | ||||||
| TJ = 25C unless otherwise noted | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | c VGS = 10V, ID =6A | - | 0.65 | 0.80 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1780 | - | pF |
| Coss | Output Capacitance | - | 162 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 9.6 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID =12A, RG = 10,VGS=10V | - | 29 | - | ns |
| tr | Turn-On Rise Time | - | 27 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 65 | - | ns | |
| tf | Turn-Off Fall Time | - | 46 | - | ns | |
| Qg | Total Gate Charge | VDS = 520V, ID =12A, VGS = 10V | - | 40.2 | - | nC |
| Qgs | Gate-Source Charge | - | 10.3 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14.4 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 12 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 48 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 12A | - | - | 1.5 | V |
| trr | Reverse Recovery Time | IS=12A, Tj = 25 dIF/dt=100A/us, VGS=0V | - | 650 | - | ns |
| Qrr | Reverse Recovery Charge | - | 4.29 | - | nC | |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina