High Current Power Switching Device Minos IRFP4227 with 300A Pulsed Drain Current and TO 247 Package

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Product Description

Product Overview

The IRFP4227 is a Silicon N-Channel Power MOSFET utilizing advanced trench technology and design for excellent RDS(ON). It offers low ON resistance, low reverse transfer capacitances, and is 100% avalanche energy tested. This MOSFET is suitable for power switching and load switch applications.

Product Attributes

Brand: MNS-KX (implied from URL and logo)
Origin: Shenzhen Minos (Shenzhen Minos reserves the right to make changes...)
Package: TO-247

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Limited Parameters
V_DSS	Drain-to-Source Breakdown Voltage				200	V
I_D	Drain Current (continuous) at T_C=25				65	A
I_DM	Drain Current (pulsed)				300	A
V_GS	Gate to Source Voltage			+/-20		V
P_tot	Total Dissipation at T_C=25				150	W
T_{j Max.}	Operating Junction Temperature				175
E_as	Single Pulse Avalanche Energy				256	mJ
Electrical Parameters
V_DS	Drain-source Voltage	V_GS=0V, I_D=250A		200	220	V
R_DS(on)	Static Drain-to-Source on-Resistance	V_GS=10V, I_D=46A		20	25	m
R_DS(on)	Static Drain-to-Source on-Resistance	V_GS=4.5V, I_D=46A		25	30	m
V_GS(th)	Gated Threshold Voltage	V_DS=V_GS,I_D=250A	3.0	3.9	5.0	V
I_DSS	Zero Gate Voltage Drain Current	V_DS=200V, V_GS= 0V			1.0	A
I_GSS(F)	Gated Body Leakage Current	V_GS= +20V			100	nA
I_GSS(R)	Gated Body Leakage Current	V_GS= -20V			-100	nA
C_iss	Input Capacitance	V_GS=0V, V_DS=25V, f=1.0MHZ		2200		pF
C_oss	Output Capacitance			225		pF
C_rss	Reverse Transfer Capacitance			165		pF
Q_g	Total Gate Charge	V_DS=25V I_D=46A V_GS=10V		58		nC
Q_gs	Gate-Source Charge			6		nC
Q_gd	Gate-Drain Charge			15		nC
t_d(on)	Turn-on Delay Time	V_DD=25V,I_D=46A,R_L=0.3 V_GS=10V,R_G=6.8		20		nS
t_r	Turn-on Rise Time			90		nS
t_d(off)	Turn-off Delay Time			45		nS
t_f	Turn-off Fall Time			90		nS
Body Diode Characteristics
I_SD	S-D Current (Body Diode)				65	A
I_SDM	Pulsed S-D Current (Body Diode)				300	A
V_SD	Diode Forward Voltage	V_GS=0V, I_DS=46A			1.4	V
t_rr	Reverse Recovery Time	T_J=25,I_F=46A di/dt=100A/us			102	nS
Q_rr	Reverse Recovery Charge				50	nC
Thermal Characteristics
R_JC	Junction-to-Case			1.3		/W

Note: Exceeding maximum ratings may cause device damage. Protect against static electricity. Shenzhen Minos reserves the right to make changes without prior notice.