Silicon N Channel MOSFET Minos IRFP240 Ideal for Switch Mode Power Supplies and High Speed Electronics
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Product Description
Product Overview
The IRFP240 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. It is well-suited for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose electronics.
Product Attributes
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Description |
| VDS | 200 | V | Drain-to-Source Voltage |
| ID | 18 | A | Continuous Drain Current |
| ID (TC=100C) | 11 | A | Continuous Drain Current at 100C |
| IDM | 72 | A | Pulsed Drain Current |
| VGS | 30 | V | Gate-to-Source Voltage |
| EAS | 580 | mJ | Single Pulse Avalanche Energy |
| dv/dt | 5.0 | V/ns | Peak Diode Recovery dv/dt |
| PD (TO-247) | 130 | W | Power Dissipation (TO-247 Package) |
| PD (TO-220F) | 42 | W | Power Dissipation (TO-220F Package) |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 300 | Maximum Temperature for Soldering | |
| RDS(ON).Typ | 0.13 | Drain-to-Source On-Resistance (Typical) | |
| VGS(TH) | 2.0 - 4.0 | V | Gate Threshold Voltage |
| Ciss | 1320 | PF | Input Capacitance (Typical) |
| Coss | 450 | PF | Output Capacitance (Typical) |
| Crss | 130 | PF | Reverse Transfer Capacitance (Typical) |
| Qg | 23 | nC | Total Gate Charge (Typical) |
| VSD | 1.2 | V | Diode Forward Voltage (Typical) |
| Trr | 350 | ns | Reverse Recovery Time (Typical) |
| Qrr | 3600 | nC | Reverse Recovery Charge (Typical) |
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Sellina