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High current N Channel MOSFET MIRACLE POWER MS0005L with 100V voltage 325A and low RDS on resistance

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Product Description

Product Overview

The MS0005L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology for superior performance. It features a high voltage rating of 100V and a continuous drain current of 325A at 25C, with a low on-resistance of 1.2m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for demanding applications such as power management in computing, CE, IE 4.0, and communications. It is also ideal for current switching in DC/DC & AC/DC (SR) sub-systems, load switching, quick/wireless charging, and motor driving. The device is halogen-free and RoHS compliant, with 100% EAS guaranteed.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Miracle Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Compliance: Halogen free; RoHS compliant
  • Testing: 100% EAS Guaranteed
  • Package Type: TOLL-8L

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, RDS(on) 100V, 325A, 1.2m@VGS = 10V
Key Characteristics Excellent RDS(on) and Low Gate Charge
Absolute Maximum Ratings
VDS Drain-Source Voltage Tc = 25C unless otherwise noted - - 100 V
VGS Gate-Source Voltage - - 20 V
ID Drain Current-Continuous TC = 25C - - 325 A
ID Drain Current-Continuous TC = 100C - - 205 A
IDM Drain Current-Pulsed - - 1300 A
PD Maximum Power Dissipation TC = 25C - - 313 W
EAS Single Pulsed Avalanche Energy - - 2025 mJ
TJ, TSTG Operating and Store Temperature Range -55 - 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case - 0.4 - C/W
RJA Thermal Resistance, Junction to Ambient - 40 - C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 3.0 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 1.2 1.5 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.4 -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 12600 - pF
Coss Output Capacitance - 2090 - pF
Crss Reverse Transfer Capacitance - 268 - pF
On Characteristics (Switching)
td(on) Turn-On Delay Time VDS = 20V, VGS = 10V, RL = 1, RGEN = 3 - 40 - ns
tr Turn-On Rise Time - 68 - ns
td(off) Turn-Off Delay Time - 130 - ns
tf Turn-Off Fall Time - 90 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 20A - 230 - nC
Qgs Gate-Source Charge - 56 - nC
Qgd Gate-Drain Charge - 76 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 325 A
ISM Maximum Pulsed Current - - 1300 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 15A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 15A, dIF/dt = 100A/s - 115 - ns
Qrr Body Diode Reverse Recovery Charge IF = 15A, dIF/dt = 100A/s - 275 - nC
Package Information (TOLL-8L)
Symbol Dimension Min. Typ. Max. Symbol Dimension Min. Typ. Max.
A 2.25 2.30 2.35 E 9.85 9.90 9.95
A1 1.75 1.80 1.85 E1 8.00 8.10 8.20
b 0.65 0.70 0.75 E2 0.65 0.70 0.75
b1 9.75 9.80 9.85 H 11.60 11.70 11.80
b2 0.70 0.75 0.80 H1 6.95 BSC -
b3 1.15 1.20 1.25 H2 5.90 BSC -
c 0.45 0.50 0.55 K 3.10 REF -
D 10.35 10.40 10.45 L 1.55 1.65 1.75
D1 11.00 11.10 11.20 L1 0.65 0.70 0.75
D2 3.25 3.30 3.35 L2 0.50 0.60 0.70
D4 4.50 4.55 4.60 L3 0.40 0.50 0.60
e 1.20 BSC - Q 7.95 REF -
e1 1.225 BSC - R 3.00 3.10 3.20

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Company Hefei Purple Horn E-Commerce Co., Ltd.
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