N Channel Enhancement Mode MOSFET MIRACLE POWER MSB002Y with 120V Drain Source Voltage and 90A Current

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Product Description

Product Overview

The MSB002Y is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 120V drain-source voltage, 90A continuous drain current, and a low on-resistance of 6.0m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and is 100% EAS guaranteed. It is designed for applications such as DC/DC converters, high-frequency switching, and synchronous rectification.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Enhancement Mode MOSFET
Technology: Advanced Trench Technology
Packaging: PDFN5*6

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Features
	Voltage, Current, RDS(on)	VGS = 10V	-	6.0	-	m
	Drain-Source Voltage	-	-	-	120	V
	Drain Current-Continuous	TC = 25C	-	-	90	A
	Drain Current-Continuous	TC = 100C	-	-	58	A
	Drain Current-Pulsed	-	-	-	360	A
	Maximum Power Dissipation	TC = 25C	-	-	125	W
	Single Pulsed Avalanche Energy	-	-	324	-	mJ
	Operating and Store Temperature Range	-	-55	-	150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case	-	-	1.0	-	C/W
RJA	Thermal Resistance, Junction to Ambient	-	-	48	-	C/W
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	120	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 120V, VGS = 0V	-	-	1.0	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.5	2.0	2.5	V
RDS(on)	Static Drain-Source On- Resistance	VGS = 10V, ID = 30A	-	6.0	7.2	m
RDS(on)	Static Drain-Source On- Resistance	VGS = 4.5V, ID = 20A	-	7.4	9.5	m
Dynamic Characteristics
RG	Gate Resistance	VDS = VGS = 0V, f = 1.0MHz	-	TBD	-
Ciss	Input Capacitance	VDS = 50V, VGS = 0V, f = 1.0MHz	-	4619	-	pF
Coss	Output Capacitance	-	-	924	-	pF
Crss	Reverse Transfer Capacitance	-	-	35	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 50V, VGS = 10V, ID = 20A, RGEN = 2.2	-	13	-	ns
tr	Turn-On Rise Time	-	-	25	-	ns
td(off)	Turn-Off Delay Time	-	-	38	-	ns
tf	Turn-Off Fall Time	-	-	34	-	ns
Qg	Total Gate Charge	VDS = 20V, VGS = 0 to 10V, ID = 20A	-	40	-	nC
Qgs	Gate-Source Charge	-	-	9.0	-	nC
Qgd	Gate-Drain Charge	-	-	10	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG = VD = 0V, Force Current	-	-	90	A
ISM	Maximum Pulsed Current	-	-	-	360	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 1A	-	-	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 15A, dIF/dt = 100A/s	-	65	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 15A, dIF/dt = 100A/s	-	70	-	nC