100V N Channel Power MOSFET Minos MDT15N10 Featuring Low Gate Charge and High EAS for Power Electronics
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The MDT15N10 is a 100V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The TO-252 package provides excellent heat dissipation.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos (derived from CONTACT information)
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | - | - | V |
| VGS=0V, ID=250A | - | - | - | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A | - | 80 | 90 | m |
| VGS=4.5V, ID=5A | 90 | 115 | - | m | ||
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | - | 5 | - | S |
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 680 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 110 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 85 | - | pF |
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5 | - | 10 | - | nS |
| Turn-on Rise Time | tr | VDD=50V, ID=5A, VGS=10V,RGEN=2.5 | - | 7 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5 | - | 34 | - | nS |
| Turn-Off Fall Time | tf | VDD=50V, ID=5A, VGS=10V,RGEN=2.5 | - | 9 | - | nS |
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | - | 16 | - | nC |
| Gate-Source Charge | Qgs | VDS=80V,ID=3A, VGS=10V | - | 4 | - | nC |
| Gate-Drain Charge | Qg | VDS=80V,ID=3A, VGS=10V | - | 5 | - | nC |
| Diode Forward Voltage | VSD | VGS=0V,IS=15A | - | - | 1.2 | V |
| Drain-Source Voltage | VDS | - | - | - | 100 | V |
| Gate-Source Voltage | VGS | - | - | - | 20 | V |
| Drain Current-Continuous | ID | - | - | - | 15 | A |
| Drain Current-Pulsed | IDM | - | - | - | 40 | A |
| Maximum Power Dissipation | PD | Tc=25 | - | - | 31 | W |
| Single pulse avalanche energy | EAS | Tj=25,VDD=50V,VGS=10V,L=0.5mH,Rg=25 | - | 21 | - | mJ |
| Operating Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 175 | |
| Thermal Resistance,Junction-to-Case | RJC | - | - | 4.8 | - | /W |
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Contact Person
Sellina