High Current P Channel Enhancement Mode MOSFET MIRACLE POWER MU3018Y with Low RDS ON and Gate Charge
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Product Description
Product Overview
The MU3018Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers excellent RDS(ON) and low gate charge, with a guaranteed 100% EAS rating. This MOSFET is designed for applications such as load switching, PWM applications, and power management, providing a -30V drain-source voltage and a continuous drain current of -54A at 25C.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MU3018Y
- Technology: P-Channel Enhancement Mode MOSFET, Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -30 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current-Continuous (TC = 25°C) | -54 | A | |||
| ID | Drain Current-Continuous (TC = 100°C) | -34 | A | |||
| IDM | Drain Current-Pulsed | -216 | A | |||
| PD | Maximum Power Dissipation (TC = 25°C) | 33.8 | W | |||
| EAS | Single Pulsed Avalanche Energy | 210 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 3.7 | °C/W | |||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250μA | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | -1.0 | μA | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | ±100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250μA | -1.0 | -1.5 | -2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -10V, ID = -20A | 5.8 | 7.6 | mΩ | |
| RDS(on) | Static Drain-Source On-Resistance | VGS = -4.5V, ID = -15A | 9.8 | 13.0 | mΩ | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = -15V, VGS = 0V, f = 1.0MHz | 3240 | pF | ||
| Coss | Output Capacitance | 380 | pF | |||
| Crss | Reverse Transfer Capacitance | 231 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = -15V, VGS = -10V, RL = 0.75Ω, RGEN = 3Ω | 21 | ns | ||
| tr | Turn-On Rise Time | 18 | ns | |||
| td(off) | Turn-Off Delay Time | 26 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Gate Charge | ||||||
| Qg | Total Gate Charge | VDS = -15V, VGS = -10V, ID = -20A | 61 | nC | ||
| Qgs | Gate-Source Charge | 7.5 | - | |||
| Qgd | Gate-Drain Charge | 15.5 | - | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | -54 | A | ||
| ISM | Maximum Pulsed Current | -216 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -20A | -1.2 | V | ||
| Trr | Body Diode Reverse Recovery Time | IF = -10A, dIF/dt = -100A/μs | 15 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | IF = -10A, dIF/dt = -100A/μs | 20 | nC | ||
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Sellina