Load Switch and PWM Application MOSFET N Channel MIRACLE POWER MS0009B with 100V Drain Source Voltage

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Product Description

Product Overview

The MS0009B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 100V drain-source voltage and a continuous drain current of 135A at 25C case temperature, with a low on-resistance of 4.4m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as Load Switches, PWM applications, and Power Management. The device is halogen-free and RoHS-compliant.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Enhancement Mode MOSFET
Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				100	V
VGS	Gate-Source Voltage				20	V
ID	Drain Current-Continuous (TC = 25C)				135	A
ID	Drain Current-Continuous (TC = 100C)				85	A
IDM	Drain Current-Pulsed				540	A
PD	Maximum Power Dissipation (TC = 25C)				179	W
EAS	Single Pulsed Avalanche Energy				506	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			0.7		C/W
RJA	Thermal Resistance, Junction to Ambient			46		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	100	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 100V, VGS = 0V	-	-	1.0	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	2.0	3.0	4.0	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 20A	-	4.4	5.8	m
Dynamic Characteristics
RG	Gate Resistance	VDS = VGS = 0V, f = 1.0MHz	-	4.2	-
Ciss	Input Capacitance	VDS = 50V, VGS = 0V, f = 1.0MHz	-	3675	-	pF
Coss	Output Capacitance		-	578	-	pF
Crss	Reverse Transfer Capacitance		-	19	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0	-	25	-	ns
tr	Turn-On Rise Time		-	41	-	ns
td(off)	Turn-Off Delay Time		-	78	-	ns
tf	Turn-Off Fall Time		-	24	-	ns
Qg	Total Gate Charge	VDS = 50V, VGS = 0 to 10V, ID = 20A	-	46	-	nC
Qgs	Gate-Source Charge		-	16.5	-	nC
Qgd	Gate-Drain Charge		-	14.5	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG = VD = 0V, Force Current	-	-	135	A
ISM	Maximum Pulsed Current		-	-	540	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 20A	-	-	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 20A, dIF/dt = 100A/s	-	46.3	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 20A, dIF/dt = 100A/s	-	350	-	nC