silicon n channel mosfet Minos IRF3205 suitable for synchronous rectification inverter systems and switching

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Product Description

The IRF3205 is a silicon N-channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal device for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.

Product Attributes

Brand: MNS-KX (implied by www.mns-kx.com)
Certifications: RoHS product

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
ABSOLUTE RATINGS
V_DSS	Drain-to-Source Voltage				55	V
I_D	Continuous Drain Current	T_C = 25C			110	A
I_D	Continuous Drain Current	T_C = 100C			80	A
I_DM	Pulsed Drain Current(Note1)				440	A
V_GS	Gate-to-Source Voltage			20		V
E_AS	Single Pulse Avalanche Energy(Note2)				1500	mJ
I_AR	Avalanche Current				25	A
E_AR	Repetitive Avalanche Current				20	mJ
dv/dt	Peak Diode Recovery dv/dt(Note3)				5.0	V/ns
P_D	Power Dissipation	TO-220			210	W
T_J, T_stg	Operating Junction and Storage Temperature Range		55		175
T_L	Maximum Temperature for Soldering				300
Electrical Characteristics (OFF Characteristics)
V_DSS	Drain to Source Breakdown Voltage	V_GS=0V, I_D=250A	55			V
BVDSS/ T_J	Bvdss Temperature Coefficient	I_D=250uA, Reference25		0.055		V/
I_DSS	Drain to Source Leakage Current	V_DS =55V, V_GS= 0V, T_j = 25			1	A
I_DSS	Drain to Source Leakage Current	V_DS =44V, V_GS= 0V, T_j = 125			10	A
I_GSS(F)	Gate to Source Forward Leakage	V_GS =+20V			100	nA
I_GSS(R)	Gate to Source Reverse Leakage	V_GS =-20V			100	nA
Electrical Characteristics (ON Characteristics)
R_DS(ON)	Drain-to-Source On- Resistance	V_GS=10V, I_D=40A		7.2	9	m
V_GS(TH)	Gate Threshold Voltage	V_DS = V_GS, I_D = 250A	2		4	V
g_fs	Forward Transconductance	V_DS=20V, I_D=40A(Note4)		65		S
Dynamic Characteristics
R_g	Gate resistance	f = 1.0MHz		1.7
C_iss	Input Capacitance	V_GS = 0V V_DS = 25V f = 1.0MHz		3247		PF
C_oss	Output Capacitance			781		PF
C_rss	Reverse Transfer Capacitance			211		PF
Source-Drain Diode Characteristics
I_S	Continuous Source Current (Body Diode)	T_C=25 C			110	A
I_SM	Maximum Pulsed Current (Body Diode)				440	A
V_SD	Diode Forward Voltage	I_S=62A, V_GS=0V		0.9	1.3	V
Switching Characteristics
t_d(ON)	Turn-on Delay Time	I_D =62A V_DD =28V V_GS = 10V R_G =4.5		14		ns
t_r	Rise Time			101		ns
t_d(OFF)	Turn-Off Delay Time			50		ns
t_f	Fall Time			65		ns
Q_g	Total Gate Charge	I_D =62A V_DD =44V V_GS = 10V		146		nC
Q_gs	Gate to Source Charge			10
Q_gd	Gate to Drain (Miller)Charge			17.5
t_rr	Reverse Recovery Time	I_S=62A, T_j = 25C dI_F/dt=100A/us, V_GS=0V		69		ns
Q_rr	Reverse Recovery Charge			143		nC