Robust P Channel Enhancement Mode MOSFET MIRACLE POWER MU3015Y with High Current and Voltage Ratings
MU3015Y P-Channel Enhancement Mode MOSFET
Product Overview
The MU3015Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-performance power management applications. It features a -30V drain-source voltage, a continuous drain current of -130A, and a low on-resistance of 1.9m (typ.) at VGS = -10V. This MOSFET offers low gate charge, 100% UIS and DVDS tested, and high power and current handling capability, making it suitable for load switching, PWM applications, and general power management. Its robust design ensures reliability and efficiency in demanding environments.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: P-Channel Enhancement Mode MOSFET
- Series: MU3015Y
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | -30 | V |
| VGS | Gate-Source Voltage | - | - | ±20 | V | |
| ID | Drain Current-Continuous | TC = 25C | - | - | -130 | A |
| ID | Drain Current-Continuous | TC = 100C | - | - | -83 | A |
| IDM | Drain Current-Pulsed | b | - | - | -520 | A |
| PD | Maximum Power Dissipation | TC = 25C | - | - | 69.5 | W |
| EAS | Single Pulsed Avalanche Energy | c | - | - | 588 | mJ |
| TJ, TSTG | Operating and Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | - | - | 1.8 | C/W | |
| RJA | Thermal Resistance, Junction to Ambient | TBD | - | - | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | - | - | -1.0 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250µA | -1.0 | -1.6 | -2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -10V, ID = -20A | - | 1.9 | 2.5 | mΩ |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -4.5V, ID = -20A | - | 2.7 | 3.6 | mΩ |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 1.8 | - | Ω |
| Ciss | Input Capacitance | VDS = -15V, VGS = 0V, f = 1.0MHz | - | 12.75 | - | nF |
| Coss | Output Capacitance | - | 1330 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 1202 | - | pF | |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDD = -15V, VGS = -10V, RL = 0.75Ω, RGEN = 3.0Ω | - | 19.5 | - | ns |
| tr | Turn-On Rise Time | - | 4.0 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 22.5 | - | ns | |
| tf | Turn-Off Fall Time | - | 37.4 | - | ns | |
| Qg | Total Gate Charge | VDS = -15V, VGS = -10V, ID = -20A | - | 210 | - | nC |
| Qgs | Gate-Source Charge | - | 24 | - | - | |
| Qgd | Gate-Drain Charge | - | 31 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | -130 | A |
| ISM | Maximum Pulsed Current | - | - | -520 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -20A | - | - | -1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = -20A, dIF/dt = -100A/µs | - | 39 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = -20A, dIF/dt = -100A/µs | - | 29.5 | - | nC |
Notes:
a. TJ = +25 °C to +150 °C.
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 0.5mH, VDD = -25V, IAS = -48.5A, RG = 25Ω Starting TJ = 25 °C.
d. Pulse width ≤300µs; duty cycle ≤0.5%.
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.