Silicon N Channel Power MOSFET MPF20N50 with 500V Drain to Source Voltage and 20A Continuous Current

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Product Description

The MPF20N50 is a silicon N-Channel Enhanced Power MOSFET designed using advanced MOSFET technology. It offers reduced conduction loss, improved switching performance, and enhanced avalanche energy. This transistor is suitable for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.

Key Characteristics

VDS=500V, ID=20A
RDS(ON)
Fast Switching
Low Crss
100% avalanche tested
Improved dv/dt capability
RoHS product

Applications

High frequency switching mode power supply

Ordering Information

Ordering Codes	Package	Product Code	Packing
MPF20N50	TO-220F	MPF20N50	Tube

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
ABSOLUTE RATINGS
VDSS	Drain-to-Source Voltage				500	V
ID	Continuous Drain Current	TC = 25C			20	A
ID	Continuous Drain Current	TC = 100C			12.6	A
IDM	Pulsed Drain Current(Note1)				80	A
VGS	Gate-to-Source Voltage			30		V
EAS	Single Pulse Avalanche Energy(Note2)				1200	mJ
dv/dt	Peak Diode Recovery dv/dt(Note3)				5.0	V/ns
PD	Power Dissipation (TO-220, TO-3PN)				230	W
	Derating Factor above 25C				1.85	W/
PD	Power Dissipation (TO-220F, TO-3PF)				48	W
	Derating Factor above 25C				0.38	W/
TJTstg	Operating Junction and Storage Temperature Range		55		150
TL	Maximum Temperature for Soldering				300
Thermal Characteristics (TO-220)
RJC	Junction-to-Case			0.54		/W
RJA	Junction-to-Ambient			62.5		/W
Thermal Characteristics (TO-220F)
RJC	Junction-to-Case			2.6		/W
RJA	Junction-to-Ambient			62.5		/W
OFF Characteristics
VDSS	Drain to Source Breakdown Voltage	VGS=0V, ID=250A	500	--	--	V
BVDSS/ TJ	Bvdss Temperature Coefficient	ID=250uA, Reference25	--	0.6	--	V/
IDSS	Drain to Source Leakage Current	VDS=500V, VGS= 0V, Tj = 25	--	--	10	A
IDSS	Drain to Source Leakage Current	VDS=400V, VGS= 0V, Tj = 125	--	--	100	A
IGSS(F)	Gate to Source Forward Leakage	VGS=+30V	--	--	100	nA
IGSS(R)	Gate to Source Reverse Leakage	VGS=-30V	--	--	-100	nA
ON Characteristics
RDS(ON)	Drain-to-Source On- Resistance	VGS=10V, ID=10A(Note4)	--	0.26	0.29
VGS(TH)	Gate Threshold Voltage	VDS = VGS, ID = 250A(Note4)	2.0	--	4.0	V
gfs	Forward Transconductance	VDS=20V, ID =10A(Note4)	--	12	--	S
Dynamic Characteristics
Rg	Gate resistance	f = 1.0MHz	--	1.5	--
Ciss	Input Capacitance	VGS = 0V VDS = 25V f = 1.0MHz	--	1920	--	PF
Coss	Output Capacitance		--	290	--	PF
Crss	Reverse Transfer Capacitance		--	18	--	PF
Switching Characteristics
td(ON)	Turn-on Delay Time	ID =18A VDD = 250V VGS = 10V RG =20	--	33	--	ns
tr	Rise Time		--	75	--	ns
td(OFF)	Turn-Off Delay Time		--	91	--	ns
tf	Fall Time		--	83	--	ns
Qg	Total Gate Charge	ID =18A VDD =400V VGS = 10V	--	56	--	nC
Qgs	Gate to Source Charge		--	13	--	nC
Qgd	Gate to Drain (Miller)Charge		--	20	--	nC
Source-Drain Diode Characteristics
IS	Continuous Source Current (Body Diode)	TC=25 C	--	--	20	A
ISM	Maximum Pulsed Current (Body Diode)		--	--	85	A
VSD	Diode Forward Voltage	IS=20A, VGS=0V(Note4)	--	--	1.2	V
Trr	Reverse Recovery Time	IS=20A, Tj = 25C dIF/dt=100A/us, VGS=0V	--	536	--	ns
Qrr	Reverse Recovery Charge		--	5668	--	nC
Irrm	Reverse Recovery Current		--	21.1	--	A