Durable N Channel MOSFET MIRACLE POWER MS0004C with 100V Drain Source Voltage and 120A Drain Current
Product Overview
The MS0004C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features 100V drain-source voltage and 120A continuous drain current with a typical on-resistance of 3.6m at VGS = 10V. This MOSFET offers ultra-low RDS(ON) and low gate charge, making it suitable for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC (SR) sub-systems, and power management in telecom, industrial automation, and CE devices. It is halogen-free and RoHS-compliant, and 100% avalanche tested.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Halogen-free, RoHS-compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous, TC =25C | 120 | A | |||
| IDM | Drain Current-Pulsed | b | 480 | A | ||
| PD | Maximum Power Dissipation @ TJ =25C | 312 | W | |||
| EAS | Single Pulsed Avalanche Energy | d | 576 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.4 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 45 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | c, VGS = 10V, ID = 50A | - | 3.6 | 4.5 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 2.5 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 1MHz | - | 4025 | - | pF |
| Coss | Output Capacitance | - | 660 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 13.6 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 50V, VGS = 10V, RL = 2.5, RGEN = 3 | - | 17 | - | ns |
| tr | Turn-On Rise Time | - | 37 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 68 | - | ns | |
| tf | Turn-Off Fall Time | - | 61 | - | ns | |
| Qgs | Gate-Source Charge | VDS = 50V, VGS = 0 to 10V, ID = 20A | - | 19 | - | nC |
| Qgd | Gate-Drain Charge | - | 19.4 | - | nC | |
| Qg | Total Gate Charge | - | 50 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | - | - | 120 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | - | - | 480 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 0.80 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 94 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 242 | - | nC |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 0.5mH, VDD = 50V, IAS = 48A, RG = 25 Starting TJ = 25 .
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