650V Silicon Trench Gate MIRACLE POWER MIQ50T065DFS IGBT for Charging Piles and Power Supply Systems
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Product Description
Product Overview
The MIQ50T065DFS is a Silicon Trench FS IGBT from Miracle Technology Co., Ltd. featuring low switching losses, a positive temperature coefficient, and a 650V Trench Gate/Field Stop Process. It is designed for applications such as inverters, charging piles, on-board chargers, and uninterrupted power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Material: Silicon
- Technology: Trench Gate/Field Stop Process
Technical Specifications
| Type | VCES (V) | IC (A) | VCE(sat) @ Tvj=25C (V) | Tvj max (C) | Package |
| MIQ50T065DFS | 650 | 50 | 1.58 | 175 | TO-247 |
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
| VCES | Collector-emitter voltage | Tvj = 25C | - | - | 650 | V |
| IC | DC collector current | limited by Tvj max, TC = 25C | - | - | 100 | A |
| IC | DC collector current | limited by Tvj max, TC = 100C | - | - | 50 | A |
| IF | Diode forward current | limited by Tvj max, TC = 25C | - | - | 100 | A |
| IF | Diode forward current | limited by Tvj max, TC = 100C | - | - | 50 | A |
| VGE | Gate-emitter voltage | - | - | - | 20 | V |
| VGE | Gate-emitter transient voltage | - | - | - | 30 | V |
| Ptot | Power dissipation | TC = 25C | - | - | 275 | W |
| Tvj(OP) | Operating junction temperature | - | -40 | - | 175 | C |
| tSC | Short circuit withstand time | VGE = 15.0V, VCE = 400V | - | - | - | s |
| RJC | IGBT thermal resistance, junction - case | - | - | - | 0.38 | K/W |
| RJC | Diode thermal resistance, junction - case | - | - | - | 0.45 | K/W |
| V(BR)CES | Collector-emitter breakdown voltage | VGE = 0V,IC = 250A | 650 | - | - | V |
| VCEsat | Collector-emitter saturation voltage | VGE = 15V,IC = 50A, Tvj = 25C | - | 1.58 | 2.1 | V |
| VCEsat | Collector-emitter saturation voltage | VGE = 15V,IC = 50A, Tvj = 125C | - | 1.87 | - | V |
| VCEsat | Collector-emitter saturation voltage | VGE = 15V,IC = 50A, Tvj = 150C | - | 1.95 | - | V |
| VF | Diode forward voltage | VGE = 0V,IC = 50A, Tvj = 25C | - | 1.63 | 2.1 | V |
| VF | Diode forward voltage | VGE = 0V,IC = 50A, Tvj = 125C | - | 1.42 | - | V |
| VF | Diode forward voltage | VGE = 0V,IC = 50A, Tvj=150C | - | 1.37 | - | V |
| VGE(th) | Gate-emitter threshold voltage | VCE = VGE,IC = 500A | 4.2 | 5.0 | 5.8 | V |
| ICES | Zero gate voltage collector current | VCE = 650V,VGE = 0V | - | - | 1 | mA |
| IGES | Gate-emitter leakage current | VCE = 0V,VGE = 20V | - | - | 200 | nA |
| gfs | Transconductance | VCE = 20V,IC = 50A | - | 77 | - | S |
| Cies | Input capacitance | VCE = 25V, VGE = 0V, F = 1MHZ | - | 5.46 | - | nF |
| Cres | Reverse transfer capacitance | - | - | 0.1 | - | nF |
| QG | Gate charge | VGE = -15+15V | - | 0.5 | - | C |
| td(on) | Turn-On Delay Time | VCE = 400V, IC = 50A, VGE = 15V, Rg = 8 | - | 33 | - | ns |
| tr | Turn-On Rise Time | - | - | 75 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 21 | - | ns |
| tf | Turn-Off Fall Time | - | - | 41 | - | ns |
| Eon | Turn-on energy | - | - | 2.37 | - | mJ |
| Eoff | Turn-off energy | - | - | 0.60 | - | mJ |
| trr | Diode reverse recovery time | IF = 50A, VR = 400V, VGE = -15V, di/dt = 411A/s | - | 133 | - | ns |
| Qrr | Diode reverse recovery charge | - | - | 1.48 | - | C |
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