650V N Channel Power MOSFET Featuring 6A Continuous Drain Current MIRACLE POWER MJF06N65 for LED Lighting Applications
Product Overview
The MJF06N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It offers a 650V breakdown voltage, 6A continuous drain current, and a typical on-resistance of 0.75 at 10V VGS. This MOSFET is 100% avalanche tested and is suitable for applications such as PC power supplies, PD adaptors, LCD & PDP TVs, LED lighting, and switch-mode power supplies like Boost PFC, single-ended flyback, and two-transistor forward topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 6 | A | |||
| IDM | Drain Current-Pulsed | 18 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 24 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 115 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 5.21 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10mA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 2.5A | - | 0.75 | 0.85 | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 33.7 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 377 | - | pF |
| Coss | Output Capacitance | - | 33 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 4.55 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 13V, ID = 2.5A, RG = 6.8 | - | 8.4 | - | ns |
| tr | Turn-On Rise Time | - | 21.6 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 45.2 | - | ns | |
| tf | Turn-Off Fall Time | - | 24.4 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 2.5A | - | 10.3 | - | nC |
| Qgs | Gate-Source Charge | - | 1.84 | - | - | |
| Qgd | Gate-Drain Charge | - | 2.73 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 6 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 18 | V |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.78 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 2.5A, dIF/dt = 100A/s | - | 124 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 2.5A, dIF/dt = 100A/s | - | 0.88 | - | C |
Notes:
a. TJ = +25 to +150
b. Repetitive rating; pulse width limited by maximum junction temperature.
c. Pulse width 300s; duty cycle 2%
d. L = 10mH, VDD = 50V, IAS = 4.8A, RG = 25 Starting TJ = 25 .
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