Power MOSFET MIRACLE POWER NPC830 with 500V Drain Source Voltage and Fast Switching Characteristics

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Product Description

Product Overview

The MPC05N50/NPC830 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. Designed for high-voltage applications, it features a 500V drain-source voltage rating and a continuous drain current of 5A at 25C. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for charger and standby power applications.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Line: MPC/NPC Series
Channel Type: N-Channel
Technology: Power MOSFET

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				500	V
VGS	Gate-Source Voltage				±30	V
ID	Drain Current-Continuous, TC =25C				5	A
ID	Drain Current-Continuous, TC =100C				3.1	A
IDM	Drain Current-Pulsed	b			20	A
PD	Maximum Power Dissipation @ TJ =25C				75	W
EAS	Single Pulsed Avalanche Energy	d			180	mJ
dv/dt	Peak Diode Recovery dv/dt	e			5.0	V/ns
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction-Case				1.67	C/W
RJA	Thermal Resistance Junction-Ambient				62.5	C/W
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	500	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 500V, VGS = 0V	-	-	1	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = ±30V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID =250A	2	-	4	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID =2.5A	-	1.35	1.55
Dynamic Characteristics
gfs	Forward Transconductance	VDS=15V, ID =2.5A	-	4	-	S
Ciss	Input Capacitance	VDS = 25V, VGS = 0V, f = 1.0MHz	-	580	-	pF
Coss	Output Capacitance		-	60	-	pF
Crss	Reverse Transfer Capacitance		-	4	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 250V, ID =5A, RG = 10,VGS=10V	-	14	-	ns
tr	Turn-On Rise Time		-	18	-	ns
td(off)	Turn-Off Delay Time		-	31	-	ns
tf	Turn-Off Fall Time		-	11	-	ns
Qg	Total Gate Charge	VDS = 400V, ID =5A, VGS = 10V	-	12.4	-	nC
Qgs	Gate-Source Charge		-	3.1	-	nC
Qgd	Gate-Drain Charge		-	4.8	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VGS = 0V	-	-	5	A
ISM	Maximum Pulsed Current	VGS = 0V	-	-	20	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 5A	-	-	1.4	V
Trr	Body Diode Reverse Recovery Time	IF=5A,VGS=0V	-	260	-	ns
Qrr	Reverse Recovery Charge	di/dt=100A/us	-	2.0	-	uC