Silicon N Channel Minos MPG100N03 MOSFET offering excellent RDS ON and avalanche energy performance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MPG100N03 is a Silicon N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers. Key features include a VDS of 30V, ID of 100A, low ON resistance, low reverse transfer capacitances, and a 100% single pulse avalanche energy test.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Electrical Characteristics | VDS | VGS =0V, ID=250A | 30 | V | ||
| RDS(on) | VGS =10V, ID=20A | 4.2 | 5.0 | m | ||
| VGS(th) | VDS=VGS, ID=250A | 1.0 | 1.5 | 2.0 | V | |
| IDSS | VDS=30V, VGS = 0V | 1.0 | A | |||
| IGSS(F) | VGS = +30V | 100 | nA | |||
| IGSS(R) | VGS = -30V | -100 | nA | |||
| Ciss | VGS =0V, VDS=25V, f=1.0MHZ | 2315 | pF | |||
| Coss | VGS =0V, VDS=25V, f=1.0MHZ | 190 | pF | |||
| Crss | VGS =0V, VDS=25V, f=1.0MHZ | 11 | pF | |||
| Switching Characteristics | td(on) | VDD=20V,ID=50A, RG=10 | 28 | nS | ||
| tr | VDD=20V,ID=50A, RG=10 | 21 | nS | |||
| td(off) | VDD=20V,ID=50A, RG=10 | 62 | nS | |||
| tf | VDD=20V,ID=50A, RG=10 | 32 | nS | |||
| Qg | VDS=20V ID=50A VGS=10V | 40 | nC | |||
| Source-Drain Diode Characteristics | ISD | 100 | A | |||
| ISDM | 400 | A | ||||
| VSD | VGS =0V, IDS=30A | 1.5 | V | |||
| trr | TJ=25,IF=30A di/dt=100A/us | 555 | nS | |||
| Absolute Maximum Ratings | VDSS | 30 | V | |||
| ID | Tc=25 | 100 | A | |||
| Package Description | RJC | Junction-to-Case | 2.5 | /W |
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