Power MOSFET Minos MPG08N68S Featuring High EAS and Excellent Thermal Performance for Industrial Circuits
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Product Description
Product Overview
The MPG08N68 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high density cell design ensures ultra-low Rdson, and the special process technology provides high ESD capability and good stability with high EAS. The device is fully characterized for avalanche voltage and current, and its excellent package design ensures good heat dissipation.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen Minos Technology Co., Ltd. (implied from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 68 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 100 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 340 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 125 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 370 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 68 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=68V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=45A (Note 3) | - | 6.5 | 7.5 | mΩ |
| Forward Transconductance | GFS | VDS=10V,ID=20A | - | 20 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, F=1.0MHz | - | 3200 | - | pF |
| Output Capacitance | Coss | - | 440 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V,RGEN=6Ω (Note 4) | - | 16 | - | nS |
| Turn-on Rise Time | tr | - | 95 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 47 | - | nS | |
| Turn-Off Fall Time | tf | - | 31 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=20A, VGS=10V | - | 40 | - | nC |
| Gate-Source Charge | Qgs | - | 11 | - | nC | |
| Gate-Drain Charge | Qg d | - | 15 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=90A (Note 3) | - | - | 1.2 | V |
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.2 | °C/W | |||
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