Power MOSFET with 900V Breakdown Voltage and Low Reverse Transfer Capacitance MIRACLE POWER MPC09N90

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Product Description

Product Overview

The MPC09N90 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. designed for power switch circuits in adaptors and chargers. It features a high breakdown voltage of 900V and a continuous drain current of 9A. Key advantages include low ON resistance (RDS(ON) Typ. = 0.9 @ VGS = 10V), low gate charge, low reverse transfer capacitance, and fast switching characteristics. The device is 100% avalanche tested, ensuring reliability in demanding applications.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Power MOSFET

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Features
	Voltage, Current, RDS(ON)		900V, 9A, 0.9@VGS = 10V
	Low ON Resistance
	Low Gate Charge
	Low Reverse Transfer Capacitance
	Fast Switching
	100% Avalanche Tested
	Application	Power switch circuit of adaptor and charger
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS	Drain-Source Voltage				900	V
VGS	Gate-Source Voltage				30	V
ID	Drain Current-Continuous, TC =25C				9	A
ID	Drain Current-Continuous, TC =100C				5.4	A
IDM	Drain Current-Pulsed	b			36	A
PD	Maximum Power Dissipation @ TJ =25C				41	W
EAS	Single Pulsed Avalanche Energy	d			1035	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction-Case	Max.			3.02	C/W
RJA	Thermal Resistance Junction-Ambient	Max.			62.5	C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	900	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 900V, VGS = 0V	-	-	25	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 30V	-	-	10	A
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID =250A	2	-	4	V
RDS(on)	Static Drain-Source On- Resistance	c, VGS = 10V, ID =4.5A	-	0.9	1.1
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 25V, VGS = 0V, f = 1.0MHz	-	2716	-	pF
Coss	Output Capacitance		-	211	-	pF
Crss	Reverse Transfer Capacitance		-	11.3	-	pF
On Characteristics (Switching)
td(on)	Turn-On Delay Time	VDD = 450V, ID =9A, RG = 10,VGS=10V	-	30.4	-	ns
tr	Turn-On Rise Time		-	41.6	-	ns
td(off)	Turn-Off Delay Time		-	82	-	ns
tf	Turn-Off Fall Time		-	52	-	ns
Qg	Total Gate Charge	VDS = 720V, ID =9A, VGS = 10V	-	57.9	-	nC
Qgs	Gate-Source Charge		-	10.6	-	nC
Qgd	Gate-Drain Charge		-	23.4	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VGS = 0V	-	-	9	A
ISM	Maximum Pulsed Current	VGS = 0V	-	-	36	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 9A	-	-	1.5	V
trr	Reverse Recovery Time	IS=9A,Tj= 25 dIF/dt=100A/us, VGS=0V	-	845	-	ns
Qrr	Reverse Recovery Charge		-	8.03	-	uC