High Current N Channel MOSFET MIRACLE POWER MPQ50N30 Suitable for Power Management and DC DC Converters
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Product Description
Product Overview
The MPQ50N30 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency switching applications. It features a 300V breakdown voltage, a continuous drain current of 50A at 25C, and a low on-resistance of 65m (typ.) at VGS = 10V. This MOSFET offers fast switching speeds, low Crss, and is 100% avalanche tested, making it suitable for high-efficiency switch mode power supplies, DC-DC converters, power management for inverter systems, and power management for UPS.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPQ Series
- Channel Type: N-Channel
- Technology: Power MOSFET
- Package Type: TO-247-3L
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 300 | V | |||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID | Drain Current-Continuous, TC =25°C | 50 | A | |||
| ID | Drain Current-Continuous, TC =100°C | 30 | A | |||
| IDM | Drain Current-Pulsed | 150 | A | |||
| PD | Maximum Power Dissipation @ TJ =25°C | 205 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 720 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | °C | ||
| Thermal Characteristics | ||||||
| RθJC | Thermal Resistance, Junction to Case | 0.61 | °C/W | |||
| RθJA | Thermal Resistance, Junction to Ambient | 43 | °C/W | |||
| Electrical Characteristics (TJ = 25°C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 300 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 300V, VGS = 0V | - | - | 1 | μA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±30V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250μA | 2 | 3 | 4 | V |
| On Characteristics | ||||||
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =25A | - | 65 | 80 | mΩ |
| gfs | Forward Transconductance | VDS = 15V, ID =25A | - | 26.5 | - | S |
| Dynamic Characteristics | ||||||
| Rg | Gate Series Resistance | f = 1.0MHz | - | 5 | - | Ω |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10KHz | - | 4086 | - | pF |
| Coss | Output Capacitance | - | 220 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 16 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 150V, ID =50A, VGS=10V, RG=5Ω | - | 16 | - | ns |
| tr | Turn-On Rise Time | - | 47 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 45 | - | ns | |
| tf | Turn-Off Fall Time | - | 15 | - | ns | |
| Qg | Total Gate Charge | VDS = 150V, ID =50A, VGS = 10V | - | 81 | - | nC |
| Qgs | Gate-Source Charge | - | 21 | - | nC | |
| Qgd | Gate-Drain Charge | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 50 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 150 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 50A | - | 0.9 | 2 | V |
| Trr | Body Diode Reverse Recovery Time | IS=50A,VGS = 0V, dIF/dt=100A/us | - | 240 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS=50A,VGS = 0V, dIF/dt=100A/us | - | 2053 | - | nC |
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