High Voltage N Channel MOSFET MIRACLE POWER MJD07N65 with CRM Super Junction Technology and Low RDS
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Delivery Time:
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Product Description
Product Overview
The MJD07N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring CRM(CQ) Super_Junction technology. It offers superior performance with low RDS(ON) for on-state efficiency and a low FOM for fast switching efficiency. This MOSFET is designed for applications including chargers, power supplies, LED/LCD/PDP TV and monitor lighting, and solar/renewable/UPS-micro inverter systems.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: CRM(CQ) Super_Junction
- Channel Type: N-Channel
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| Voltage | 650 | V | |||
| Current | 7 | A | |||
| RDS(ON) | VGS = 10V | 0.58 | 0.65 | ||
| Absolute Maximum Ratings | |||||
| VDS | 650 | V | |||
| VGS | 30 | V | |||
| ID (Continuous, TC=25C) | 7 | A | |||
| ID (Continuous, TC=100C) | 5 | A | |||
| IDM (Pulsed) | 28 | A | |||
| PD (Max Power Dissipation @ TJ=25C) | 75 | W | |||
| EAS (Single Pulsed Avalanche Energy) | 245 | mJ | |||
| TJ, TSTG (Operating and Store Temperature Range) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| R JC (Thermal Resistance, Junction-Case) | Max. | 1.66 | C/W | ||
| R JA (Thermal Resistance Junction-Ambient) | Max. | 133 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS (Zero Gate Voltage Drain Current) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS (Forward Gate Body Leakage Current) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| VGS(th) (Gate Threshold Voltage) | VDS=VGS, ID =250A | 2.5 | - | 4.5 | V |
| RDS(on) (Static Drain-Source On-Resistance) | VGS = 10V, ID =3.5A | - | 0.58 | 0.65 | |
| Dynamic Characteristics | |||||
| Ciss (Input Capacitance) | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 382 | - | pF |
| Coss (Output Capacitance) | - | 29 | - | pF | |
| Crss (Reverse Transfer Capacitance) | - | 24 | - | pF | |
| Switching Characteristics | |||||
| td(on) (Turn-On Delay Time) | VDD = 400V, ID =3.5A, RG =25,VGS=10V | - | 7.4 | - | ns |
| tr (Turn-On Rise Time) | - | 9.4 | - | ns | |
| td(off) (Turn-Off Delay Time) | - | 48 | - | ns | |
| tf (Turn-Off Fall Time) | - | 7.5 | - | ns | |
| Qg (Total Gate Charge) | VDS=480V,ID=3.5A, VGS=10Vf =1MHz | - | 12.5 | - | nC |
| Qgs (Gate-Source Charge) | - | 2.7 | - | nC | |
| Qgd (Gate-Drain Charge) | - | 5.2 | - | nC | |
| Drain-Source Diode Characteristics | |||||
| VSD (Drain-Source Diode Forward Voltage) | VGS = 0V, IS = 3.5A | - | 0.85 | 1.2 | V |
| Trr (Body Diode Reverse Recovery Time) | di/dt=100A/us. IS=3.5A | - | 189 | - | ns |
| Qrr (Reverse Recovery Charge) | - | 1500 | - | nC | |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina