Load Switch MOSFET MIRACLE POWER MU3008D Featuring N Channel Enhancement Mode and Advanced Trench Technology

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

MU3008D N-Channel Enhancement Mode MOSFET

Product Overview
The MU3008D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology. It offers a drain-source voltage of 30V and a continuous drain current of 40A, with a typical on-resistance (RDS(ON)) of 7.4m at VGS = 10V. This MOSFET is designed for excellent RDS(ON) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as load switches, PWM applications, and power management.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Enhancement Mode MOSFET
Technology: Advanced Trench Technology

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS	Drain-Source Voltage				30	V
VGS	Gate-Source Voltage				±20	V
ID	Drain Current-Continuous	TC = 25C			40	A
ID	Drain Current-Continuous	TC = 100C			25	A
IDM	Drain Current-Pulsed				160	A
PD	Maximum Power Dissipation	TC = 25C			69	W
EAS	Single Pulsed Avalanche Energy				45	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			1.8		C/W
RJA	Thermal Resistance, Junction to Ambient			32		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	30	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 30V, VGS = 0V	-	-	1.0	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = ±20V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.0	1.7	2.5	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 20A	-	7.4	10	m
RDS(on)	Static Drain-Source On-Resistance	VGS = 4.5V, ID = 10A	-	11	15	m
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 15V, VGS = 0V, f = 1.0MHz	-	1002	-	pF
Coss	Output Capacitance		-	131	-	pF
Crss	Reverse Transfer Capacitance		-	105	-	pF
On Characteristics (Switching)
td(on)	Turn-On Delay Time	VDD = 15V, VGS = 10V, ID = 20A, RGEN = 3	-	6	-	ns
tr	Turn-On Rise Time		-	19	-	ns
td(off)	Turn-Off Delay Time		-	22	-	ns
tf	Turn-Off Fall Time		-	5	-	ns
Qg	Total Gate Charge	VDD = 15V, VGS = 0 to 10V, ID = 20A	-	20	-	nC
Qgs	Gate-Source Charge		-	4	-	nC
Qgd	Gate-Drain Charge		-	5	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG = VD = 0V, Force Current	-	-	40	A
ISM	Maximum Pulsed Current		-	-	160	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 30A	-	-	1.2	V
Trr	Body Diode Reverse Recovery Time	IF = 20A, di/dt = 100A/s	-	8	-	ns
Qrr	Body Diode Reverse Recovery Charge	IF = 20A, di/dt = 100A/s	-	2	-	nC