High Voltage N Channel Power MOSFET MIRACLE POWER MPD07N65A with 650V Breakdown and 7A Drain Current

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Product Description

MPD07N65A N-Channel Power MOSFET

The MPD07N65A is an N-Channel Power MOSFET designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 7A, and a low on-resistance of 1.15 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds and low Crss, making it suitable for adapter power supplies, LCD panel power, e-bike chargers, and switching mode power supplies. It is 100% avalanche tested for enhanced reliability.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Model: MPD07N65A
Type: N-Channel Power MOSFET

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				650	V
VGS	Gate-Source Voltage				30	V
ID	Drain Current-Continuous, TC =25C				7	A
ID	Drain Current-Continuous, TC =100C				4	A
IDM	Drain Current-Pulsed				28	A
PD	Maximum Power Dissipation @ TJ =25C				69	W
EAS	Single Pulsed Avalanche Energy				125	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
R JC	Thermal Resistance, Junction-Case				1.8	C/W
R JA	Thermal Resistance Junction-Ambient				60	C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	650	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 650V, VGS = 0V	-	-	1	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 30V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID =250A	2	-	4	V
RDS(on)	Static Drain-Source On- Resistance	VGS = 10V, ID =3.5A	-	1.15	1.35
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 25V, VGS = 0V, f = 1.0MHz	-	1089	-	pF
Coss	Output Capacitance		-	100	-	pF
Crss	Reverse Transfer Capacitance		-	14	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 325V, ID =7A, RG = 10,VGS=10V	-	19	-	ns
tr	Turn-On Rise Time		-	29	-	ns
td(off)	Turn-Off Delay Time		-	78	-	ns
tf	Turn-Off Fall Time		-	35	-	ns
Qg	Total Gate Charge	VDS = 520V, ID =7A, VGS = 10V	-	27	-	nC
Qgs	Gate-Source Charge		-	6	-	nC
Qgd	Gate-Drain Charge		-	11	-	nC
Drain-Source Diode Characteristics
IS	Forward Continuous Current	VGS = 0V	-	-	7	A
ISM	Maximum Pulsed Current	VGS = 0V	-	-	28	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 7A	-	-	1.4	V
Trr	Body Diode Reverse Recovery Time	IS=7A,VGS=0V, di/dt=100A/us	-	340	-	ns
Qrr	Reverse Recovery Charge		-	2900	-	nC