Power Management Device MIRACLE POWER MU2305T P Channel Enhancement Mode MOSFET with Low Gate Charge
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Product Description
Product Overview
The MU2305T is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management, offering a continuous drain current of -4.1A and a drain-source voltage of -20V. It is also lead-free.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: P-Channel Enhancement Mode
- Lead Free: Yes
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGS) | 12 | V | |||
| Drain Current-Continuous (ID) | TA = 25C | -4.1 | A | ||
| Drain Current-Continuous (ID) | TA = 100C | -2.6 | A | ||
| Drain Current-Pulsed (IDM) | -16 | A | |||
| Maximum Power Dissipation (PD) | @ TA = 25C | 1.0 | W | ||
| Store Temperature Range (TSTG) | -55 | 150 | C | ||
| Thermal Characteristics | |||||
| Thermal Resistance Junction-Ambient (RJA) | Max | 125 | C/W | ||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = -250A | -20 | - | V | |
| Zero Gate Voltage Drain Current (IDSS) | VDS = -20V, VGS = 0V | 1.0 | A | ||
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 12V | 100 | nA | ||
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID =-250A | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS =-4.5V, ID =-3A | 33 | 38 | m | |
| Static Drain-Source On-Resistance (RDS(on)) | VGS =-2.5V, ID =-3A | 41 | 53 | m | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = -10V, VGS = 0V, f = 1.0MHz | 830 | - | pF | |
| Output Capacitance (Coss) | 132 | - | pF | ||
| Reverse Transfer Capacitance (Crss) | 85 | - | pF | ||
| Total Gate Charge (Qg) | VGS = 0 to -4.5V, VDS =-10V,ID=-2A | 6.5 | - | nC | |
| Gate Source Charge (Qgs) | 1.4 | - | nC | ||
| Gate Drain Charge (Qgd) | 1.7 | - | nC | ||
| Switching Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD=-10V, VGS =-4.5V, ID=-3.3A, RGEN=1 | 10 | - | ns | |
| Turn-On Rise Time (tr) | 32 | - | ns | ||
| Turn-Off Delay Time (td(off)) | 50 | - | ns | ||
| Turn-Off Fall Time (tf) | 51 | - | ns | ||
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | - | -4.1 | A | ||
| Maximum Pulsed Diode Forward Current (ISM) | - | -16 | A | ||
| Drain to Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = -4.1A | - | -1.2 | V | |
| Body Diode Reverse Recovery Time (Trr) | di/dt=100A/us, IF=-3A | 21.6 | - | ns | |
| Body Diode Reverse Recovery Charge (Qrr) | 6.5 | - | nC | ||
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