High Current N Channel MOSFET MIRACLE POWER MS8003L with Low Gate Charge and 383 Amp Continuous Drain Current
Product Overview
The MS8003L is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., engineered with Miracle Technology. It features a robust 80V drain-source voltage and a continuous drain current of 383A at 25C, with a low on-resistance (RDS(on)) of 1.0m typ. at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is halogen-free and RoHS-compliant, with 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Compliance: Halogen-free; RoHS-compliant
- Testing: 100% EAS Guaranteed
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 80 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 383 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 242 | A | |||
| IDM | Drain Current-Pulsed | 1530 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 357 | W | |||
| EAS | Single Pulsed Avalanche Energy | 2048 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.35 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 35 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 80 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 80V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 1.0 | 1.3 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 3.1 | - | |
| Ciss | Input Capacitance | VDS = 40V, VGS = 0V, f = 1.0MHz | - | 13.65 | - | nF |
| Coss | Output Capacitance | - | 4421 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 110 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 40V, VGS = 10V, ID = 20A, RGEN = 3.0 | - | 33 | - | ns |
| tr | Turn-On Rise Time | - | 54 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 138 | - | ns | |
| tf | Turn-Off Fall Time | - | 73 | - | ns | |
| Qg | Total Gate Charge | VDS = 40V, VGS = 0 to 10V, ID = 20A | - | 200 | - | nC |
| Qgs | Gate-Source Charge | - | 68 | - | nC | |
| Qgd | Gate-Drain Charge | - | 41 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 383 | A |
| ISM | Maximum Pulsed Current | - | - | 1530 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, dIF/dt = 100A/s | - | 115 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, dIF/dt = 100A/s | - | 331 | - | nC |
Notes:
a. TJ = +25 to +150 .
b. Repetitive rating: pulse width limited by maximum junction temperature.
c. L = 1mH, VDD = 60V, IAS = 64A, RG = 25 Starting TJ = 25 .
d. Pulse width 300s; duty cycle 2%.
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