Load Switching with MIRACLE POWER MU2302T N Channel Enhancement Mode MOSFET Featuring Low Gate Charge
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The MU2302T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as load switching, PWM applications, and power management. This lead-free component offers 20V drain-source voltage and continuous drain current of 4.0A at 25C, with low static drain-source on-resistance.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
- Certifications: Lead Free
- Package: SOT-23
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 20 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | 12 | V |
| ID | Drain Current-Continuous | TA = 25C | - | - | 4.0 | A |
| ID | Drain Current-Continuous | TA = 100C | - | - | 2.5 | A |
| IDM | Drain Current-Pulsed | a | - | - | 16 | A |
| PD | Maximum Power Dissipation | @ TA = 25C | - | - | 1.2 | W |
| TSTG | Store Temperature Range | -55 | - | 150 | C | |
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction-Ambient | - | - | 103 | C/W | |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 20 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 20V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 12V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 0.5 | 0.75 | 1.0 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 3A | - | 22 | 28 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 2.5V, ID = 3A | - | 26 | 35 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 10V, VGS = 0V, f = 1.0MHz | - | 445 | - | pF |
| Coss | Output Capacitance | - | 64 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 55 | - | pF | |
| Qg | Total Gate Charge | VGS = 0 to 4.5V, VDS =10V, ID=2A | - | 6.0 | - | nC |
| Qgs | Gate Source Charge | - | 1.0 | - | nC | |
| Qgd | Gate Drain Charge | - | 1.5 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD=15V, VGS = 4.5V, ID=3A, RGEN=3 | - | 4 | - | ns |
| tr | Turn-On Rise Time | - | 13 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 65 | - | ns | |
| tf | Turn-Off Fall Time | - | 33 | - | ns | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | - | - | 4 | A | |
| ISM | Maximum Pulsed Diode Forward Current | - | - | 16 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, ISD = 4A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | di/dt=60A/us, IF=2A | - | 6.0 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | - | 0.8 | - | nC | |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina