P Channel Enhancement Mode MOSFET MIRACLE POWER MU3016Y with Low Gate Charge and High Power Handling
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Product Description
Product Overview
The MU3016Y is a P-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This MOSFET offers robust performance with a -30V drain-source voltage and a continuous drain current of -100A. It features a low gate charge and high power and current handling capability, making it ideal for DC/DC converters, high-frequency switching, and synchronous rectification applications. The device is 100% UIS Tested and 100% DVDS Tested.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: P-Channel Enhancement Mode MOSFET
- Model: MU3016Y
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | -30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | -100 | A | ||
| ID | Drain Current-Continuous | TC = 100C | -62 | A | ||
| IDM | Drain Current-Pulsed | -400 | A | |||
| PD | Maximum Power Dissipation | TC = 25C | 58 | W | ||
| EAS | Single Pulsed Avalanche Energy | 484 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 2.15 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | C/W | ||||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = -250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = -30V, VGS = 0V | -1.0 | A | ||
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = -250A | -1.0 | -1.7 | -2.5 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -10V, ID = -20A | 2.8 | 3.7 | m | |
| RDS(on) | Static Drain-Source On- Resistance | VGS = -4.5V, ID = -20A | 4.6 | 6.1 | m | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | 2.2 | |||
| Ciss | Input Capacitance | VDS = -15V, VGS = 0V, f = 1.0MHz | 7000 | pF | ||
| Coss | Output Capacitance | 820 | pF | |||
| Crss | Reverse Transfer Capacitance | 540 | pF | |||
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = -15V, VGS = -10V, RL = 0.75, RGEN = 3 | 13 | ns | ||
| tr | Turn-On Rise Time | 32 | ns | |||
| td(off) | Turn-Off Delay Time | 27 | ns | |||
| tf | Turn-Off Fall Time | 9 | ns | |||
| Qg | Total Gate Charge | VDS = -15V, VGS = -10V, ID = -20A | 130 | nC | ||
| Qgs | Gate-Source Charge | 12 | nC | |||
| Qgd | Gate-Drain Charge | 31 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | -100 | A | ||
| ISM | Maximum Pulsed Current | -400 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = -20A | -1.2 | V | ||
| Trr | Body Diode Reverse Recovery Time | IF = -20A, dIF/dt = -100A/s | 30 | ns | ||
| Qrr | Body Diode Reverse Recovery Charge | IF = -20A, dIF/dt = -100A/s | 40 | nC | ||
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