MIRACLE POWER MJC30N65 N Channel MOSFET 650V 30A Featuring Power Management and Avalanche Testing
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Product Description
Product Overview
The MJC30N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for efficient power management. It offers a 650V breakdown voltage, 30A continuous drain current, and a low on-resistance of 95m (typ.) at VGS = 10V. Designed for easy gate switching control and 100% avalanche tested, this MOSFET is ideal for applications such as server and telecom power supplies, EV charging, solar inverters, UPS systems, and various power converter topologies including Boost PFC, Half Bridge, Asymmetric Half Bridge, Series Resonance Half Bridge, and Full Bridge.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: N-Channel Power MOSFET
- Technology: Advanced Super Junction Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| General Parameters | ||||||
| MJC30N65 | N-Channel Power MOSFET | |||||
| 650V, 30A, RDS(on)(Typ.) = 95m@VGS = 10V | ||||||
| Easy To Control Gate Switching | ||||||
| 100% Avalanche Tested | ||||||
| Absolute Maximum Ratings (TC = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | -30 | 30 | V | ||
| ID | Drain Current-Continuous, TC = 25C | 30 | A | |||
| IDM | Drain Current-Pulsed | 90 | A | |||
| PD | Maximum Power Dissipation, TC = 25C | 260 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | c | 15 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 1051 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.48 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 655 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 15A | - | 95 | 110 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 13.4 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 2497 | - | pF |
| Coss | Output Capacitance | - | 239 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 6.75 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS = 10V, ID = 25A, RG = 2 | - | 23 | - | ns |
| tr | Turn-On Rise Time | - | 28 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 108.4 | - | ns | |
| tf | Turn-Off Fall Time | - | 24 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 0 to 10V, ID = 25A | - | 52 | - | nC |
| Qgs | Gate-Source Charge | - | 7.1 | - | nC | |
| Qgd | Gate-Drain Charge | - | 20 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.69 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 25A, dIF/dt = 100A/s | - | 380.8 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 25A, dIF/dt = 100A/s | - | 8.8 | - | C |
| Irrm | Peak reverse recovery current | VR = 400V, IF = 25A, dIF/dt = 100A/s | - | 45.2 | - | A |
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