Load Switching MOSFET MIRACLE POWER MS0005B with 100V Drain Source Voltage and Advanced Trench Technology
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Product Description
Product Overview
The MS0005B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 100V drain-source voltage, 260A continuous drain current, and a low typical on-resistance of 1.6m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, utilizing advanced trench technology and guaranteed 100% EAS. It is designed for applications such as load switching, quick/wireless charging, motor driving, current switching in DC/DC & AC/DC (SR) subsystems, and power management in computing, CE, IE 4.0, and communications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 260 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 164 | A | |||
| IDM | Drain Current-Pulsed | 1040 | A | |||
| PD | Maximum Power Dissipation (TC = 25C) | 284 | W | |||
| EAS | Single Pulsed Avalanche Energy | 1849 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 0.44 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 37 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 1.6 | 2.0 | m |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VDS = VGS = 0V, f = 1.0MHz | - | 2.4 | - | |
| Ciss | Input Capacitance | VDS = 60V, VGS = 0V, f = 1.0MHz | - | 12.63 | - | nF |
| Coss | Output Capacitance | - | 2099 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 269 | - | pF | |
| On Characteristics (Continued) | ||||||
| td(on) | Turn-On Delay Time | VDD = 20V, VGS = 10V, RL = 1.0 RGEN = 3.0 | - | 40 | - | ns |
| tr | Turn-On Rise Time | - | 67 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 131 | - | ns | |
| tf | Turn-Off Fall Time | - | 91 | - | ns | |
| Qg | Total Gate Charge | VDS = 20V, VGS = 0 to 10V, ID = 20A | - | 230 | - | nC |
| Qgs | Gate-Source Charge | - | 56 | - | nC | |
| Qgd | Gate-Drain Charge | - | 76 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG = VD = 0V, Force Current | - | - | 260 | A |
| ISM | Maximum Pulsed Current | - | - | 1040 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 1A | - | 0.7 | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 15A, dIF/dt = 100A/s | - | 113 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 15A, dIF/dt = 100A/s | - | 274 | - | nC |
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Sellina