650V Breakdown Voltage Power MOSFET Miracle Power MPC16N65 Ideal for Switching Mode Power Supplies

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Product Description

Product Overview

The MPC16N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd. This component is designed for high-efficiency applications, featuring a 650V breakdown voltage, 16A continuous drain current, and a low on-resistance of 0.45 (typ.) at VGS = 10V. It offers fast switching characteristics and is 100% avalanche tested. Ideal for use in adapters, standby power supplies, and switching mode power supplies.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Product Type: N-Channel Power MOSFET
Model: MPC16N65
Technology: Miracle Technology

Technical Specifications

Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS)				650	V
Gate-Source Voltage (VGS)				±30	V
Drain Current-Continuous (ID) @ TC = 25°C				16	A
Drain Current-Continuous (ID) @ TC = 100°C				10.6	A
Drain Current-Pulsed (IDM)				64	A
Maximum Power Dissipation (PD) @ TJ = 25°C				190	W
Single Pulsed Avalanche Energy (EAS)				605	mJ
Operating and Store Temperature Range (TJ, TSTG)		-55		150	°C
Thermal Characteristics
Thermal Resistance, Junction-Case (RθJC)	Max.			0.66	°C/W
Thermal Resistance Junction-Ambient (RθJA)	Max			62.5	°C/W
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Off Characteristics
Drain-Source Breakdown Voltage (BVDSS)	VGS = 0V, ID = 250μA	650	-	-	V
Zero Gate Voltage Drain Current (IDSS)	VDS = 650V, VGS = 0V	-	-	1	μA
Forward Gate Body Leakage Current (IGSS)	VDS = 0V, VGS = ±30V	-	-	±100	nA
On Characteristics
Gate Threshold Voltage (VGS(th))	VDS = VGS, ID = 250μA	2	-	4	V
Static Drain-Source On-Resistance (RDS(on))	VGS = 10V, ID = 8.0A	-	0.45	0.55	Ω
Dynamic Characteristics
Forward Transconductance (gfs)	VDS = 15V, ID = 8.0A	15	-	-	S
Input Capacitance (Ciss)	VDS = 25V, VGS = 0V, f = 1.0MHz	-	2430	-	pF
Output Capacitance (Coss)		-	215	-	pF
Reverse Transfer Capacitance (Crss)		-	18	-	pF
Switching Characteristics
Turn-On Delay Time (td(on))	VDD = 325V, ID = 16A, RG = 25Ω, VGS=10V	-	28	-	ns
Turn-On Rise Time (tr)		-	68	-	ns
Turn-Off Delay Time (td(off))		-	142	-	ns
Turn-Off Fall Time (tf)		-	73	-	ns
Total Gate Charge (Qg)	VDS = 325V, ID = 16A, VGS = 10V	-	53	-	nC
Gate-Source Charge (Qgs)		-	11	-	nC
Gate-Drain Charge (Qgd)		-	23	-	nC
Drain-Source Diode Characteristics
Drain-Source Diode Forward Continuous Current (IS)	VGS = 0V	-	-	16	A
Maximum Pulsed Current (ISM)	VGS = 0V	-	-	64	A
Drain-Source Diode Forward Voltage (VSD)	VGS = 0V, IS = 16A	-	0.9	1.4	V