N Channel Enhancement Mode MOSFET MIRACLE POWER MU3400T with Low Gate Charge and Lead Free Features
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The MU3400T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for applications such as load switching, PWM applications, and power management. It is also lead-free.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
- Environmental: Lead Free
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C unless otherwise noted | - | - | 30 | V |
| Gate-Source Voltage (VGS) | Tc = 25C unless otherwise noted | - | - | 12 | V |
| Drain Current-Continuous (ID) | TA = 25C | - | - | 5.0 | A |
| Drain Current-Continuous (ID) | TA = 100C | - | - | 3.0 | A |
| Drain Current-Pulsed (IDM) | a | - | - | 20 | A |
| Maximum Power Dissipation (PD) | @ TA = 25C | - | - | 1.2 | W |
| Store Temperature Range (TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance Junction-Ambient (RJA) | Max | - | - | 103 | C/W |
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 250A | 30 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 30V, VGS = 0V | - | - | 1.0 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 12V | - | - | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 0.6 | 0.95 | 1.4 | V |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 10V, ID = 4A | - | 28 | 35 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 4.5V, ID = 3A | - | 30 | 38 | m |
| Static Drain-Source On-Resistance (RDS(on)) | VGS = 2.5V, ID = 2A | - | 35 | 45 | m |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 15V, VGS = 0V, f = 1.0MHz | - | 665 | - | pF |
| Output Capacitance (Coss) | - | - | 52 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 43 | - | pF |
| Total Gate Charge (Qg) | VGS = 0 to 4.5V, VDS = 15V, ID = 3A | - | 7.0 | - | nC |
| Gate Source Charge (Qgs) | - | - | 1.7 | - | - |
| Gate Drain Charge (Qgd) | - | - | 1.6 | - | - |
| Turn-On Delay Time (td(on)) | VDD=15V, VGS = 4.5V, ID=3A, RGEN=3 | - | 4 | - | ns |
| Turn-Off Rise Time (tr) | - | - | 17 | - | - |
| Turn-Off Delay Time (td(off)) | - | - | 95 | - | - |
| Turn-Off Fall Time (tf) | - | - | 36 | - | - |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Continuous Current (IS) | - | - | - | 5 | A |
| Maximum Pulsed Diode Forward Current (ISM) | - | - | - | 20 | A |
| Drain to Source Diode Forward Voltage (VSD) | VGS = 0V, ISD = 5 A | - | 1.2 | - | V |
| Body Diode Reverse Recovery Time (Trr) | di/dt=100A/us, IF=3A | - | 6.7 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | - | - | 2.3 | - | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina