650V Power MOSFET MIRACLE POWER MJF15N65 Featuring Low On Resistance and Suitable for Power Adaptors
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Product Description
Product Overview
The MJF15N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology. This device offers a 650V breakdown voltage, a continuous drain current of 15A, and a typical on-resistance of 0.28 at VGS = 10V. It is designed for easy gate switching control and operates in enhancement mode with a gate threshold voltage between 2.8V and 4.2V. Ideal for applications such as LED lighting, LCD & PDP TVs, power adaptors, and boost PFC switches, it is suitable for HB, AHB, and LLC topologies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Super Junction Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | Tc = 25C | - | - | 650 | V |
| Gate-Source Voltage (VGS) | Tc = 25C | - | - | 30 | V |
| Drain Current-Continuous (ID) | TC =25C | - | - | 15 | A |
| Drain Current-Pulsed (IDM) | - | - | - | 45 | A |
| Maximum Power Dissipation (PD) | @ TJ =25C | - | - | 32 | W |
| Peak Diode Recovery dv/dt | c | - | - | 15 | V/ns |
| Single Pulsed Avalanche Energy (EAS) | d | - | 405 | - | mJ |
| Operating and Store Temperature Range (TJ, TSTG) | - | -55 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RJC) | - | - | 3.9 | - | C/W |
| Thermal Resistance, Junction to Ambient (RJA) | - | - | 80 | - | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||||
| Off Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS = 0V, ID = 10mA | 655 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650V, VGS = 0V | - | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | |||||
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| Static Drain-Source On-Resistance (RDS(on)) | c VGS = 10V, ID = 7.5A | - | 0.28 | 0.30 | |
| Dynamic Characteristics | |||||
| Gate Resistance (RG) | f = 1.0MHz | - | 5.7 | - | |
| Input Capacitance (Ciss) | VDS = 50V, VGS = 0V, f = 10kHz | - | 1020 | - | pF |
| Output Capacitance (Coss) | - | - | 108 | - | pF |
| Reverse Transfer Capacitance (Crss) | - | - | 5.11 | - | pF |
| On Characteristics | |||||
| Turn-On Delay Time (td(on)) | VDD = 400V, ID = 3.8A, RG= 10 | - | 8.4 | - | ns |
| Turn-On Rise Time (tr) | - | - | 21.2 | - | ns |
| Turn-Off Delay Time (td(off)) | - | - | 32.4 | - | ns |
| Turn-Off Fall Time (tf) | - | - | 20.8 | - | ns |
| Gate-Source Charge (Qgs) | VDD = 400V, VGS = 10V, ID = 3.8A | - | 5.7 | - | nC |
| Gate-Drain Charge (Qg d) | - | - | 13.6 | - | nC |
| Total Gate Charge (Qg) | - | - | 22.94 | - | nC |
| Drain-Source Diode Characteristics | |||||
| Drain-Source Diode Forward Voltage (VSD) | VGS = 0V, IF = 1A | - | 0.74 | - | V |
| Body Diode Reverse Recovery Time (Trr) | VR = 400V, IF = 2A, dIF/dt = 100A/s | - | 216 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | VR = 400V, IF = 2A, dIF/dt = 100A/s | - | 1.3 | - | C |
| Peak reverse recovery current (Irrm) | VR = 400V, IF = 2A, dIF/dt = 100A/s | - | 16.7 | - | A |
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