NPN General Purpose Transistor Nexperia BC817W115 Featuring 45 Volt Collector Emitter Voltage Rating

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Product Description

Nexperia BC817W Series: 45 V, 500 mA NPN General-Purpose Transistors

Product Overview

The Nexperia BC817W series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in a very small SOT323 (SC-70) surface-mounted device (SMD) plastic package, offering high current capability and multiple current gain selections. They are ideal for general-purpose electronic circuits requiring reliable performance in a compact form factor.

Product Attributes

Brand: Nexperia
Package Type: SOT323 (SC-70)
Transistor Type: NPN
Complementary PNP Transistor: BC807W series

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base; Tamb = 25 C	-	-	45	V
IC	Collector current	Tamb = 25 C	-	-	500	mA
ICM	Peak collector current	Single pulse; tp 1 ms; Tamb = 25 C	-	-	1	A
hFE	DC current gain	BC817W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C	100	-	600	-
		BC817-16W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C	100	-	250	-
		BC817-25W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C	160	-	400	-
		BC817-40W [1] VCE = 1 V; IC = 100 mA; Tamb = 25 C	250	-	600	-
VCEsat	Collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA; Tamb = 25 C [1]	-	-	700	mV
VBE	Base-emitter voltage	VCE = 1 V; IC = 500 mA; Tamb = 25 C [1] [2]	-	-	1.2	V
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	3	pF
VCBO	Collector-base voltage	Open emitter; Tamb = 25 C	-	-	50	V
VEBO	Emitter-base voltage	Open collector; Tamb = 25 C	-	-	5	V
Ptot	Total power dissipation	Tamb 25 C [1] [3]	-	-	200	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C