Compact SOT23 NPN Darlington Transistor Nexperia BCV47 215 Suitable for Medium Current Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The Nexperia BCV47 is an NPN Darlington transistor housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for medium current applications up to 500 mA and low voltages up to 60 V, it offers a high DC current gain of a minimum of 2000. Its PNP complement is the BCV26. This transistor is suitable for applications such as preamplifier input amplification.

Product Attributes

Brand: Nexperia
Product Type: NPN Darlington Transistor
Package Type: SOT23 (TO-236AB)
Complementary PNP: BCV26

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCBO	Collector-base voltage	Open emitter	-	-	80	V
VCES	Collector-emitter voltage	Base short-circuited to emitter	-	-	60	V
IC	Collector current	-	-	-	500	mA
ICM	Peak collector current	-	-	-	800	mA
hFE	DC current gain	VCE = 5 V; IC = 100 mA; Tamb = 25 C	10000	-	-	-
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	80	-	-	V
V(BR)CES	Collector-emitter breakdown voltage	IC = 2 mA; VBE = 0 V; Tamb = 25 C	60	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IC = 0 A; IE = 100 A; Tamb = 25 C	10	-	-	V
ICBO	Collector-base cut-off current	VCB = 60 V; IE = 0 A; Tamb = 25 C	-	-	100	nA
ICES	Collector-emitter cut-off current	VCE = 60 V; VBE = 0 V; Tamb = 25 C	-	-	100	nA
IEBO	Emitter-base cut-off current	VEB = 10 V; IC = 0 A; Tamb = 25 C	-	-	100	nA
hFE	DC current gain	VCE = 5 V; IC = 1 mA; Tamb = 25 C	2000	-	-	-
hFE	DC current gain	VCE = 5 V; IC = 10 mA; Tamb = 25 C	4000	-	-	-
hFE	DC current gain	VCE = 5 V; IC = 100 mA; Tamb = 25 C	10000	-	-	-
hFE	DC current gain	VCE = 5 V; IC = 500 mA; Tamb = 25 C	2000	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 100 mA; IB = 1 mA; Tamb = 25 C	-	-	1	V
VBEsat	Base-emitter saturation voltage	IC = 100 mA; IB = 0.1 mA; Tamb = 25 C	-	-	1.5	V
VBEon	Base-emitter turn-on voltage	IC = 10 mA; VCE = 5 V; Tamb = 25 C	-	-	1.4	V
Ptot	Total power dissipation	Tamb 25 C	-	-	250	mW
Rth(j-a)	Thermal resistance from junction to ambient	Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint	-	-	500	K/W