N Channel MOSFET 650V 20A Low On Resistance Fast Switching MIRACLE POWER MPF20N65 for Power Conversion
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Product Description
Product Overview
The MPF20N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 20A, and a low on-resistance of 0.50 (Max.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for adaptors, standby power supplies, and switching power supplies.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MPF Series
- Technology: Miracle Technology
- Channel Type: N-Channel
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, On-Resistance | VGS = 10V | 650V, 20A, 0.50 | ||||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Applications | ||||||
| Adaptor | ||||||
| Standby Power | ||||||
| Switching Power Supply | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 20 | A | |||
| ID | Drain Current-Continuous, TC =100C | 12.5 | A | |||
| IDM | Drain Current-Pulsed | 80 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 85 | W | |||
| EAS | Single Pulsed Avalanche Energy | 980 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-Case | 1.47 | C/W | |||
| RJA | Thermal Resistance Junction-Ambient | 62.5 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID =10A | - | 0.40 | 0.50 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 3059 | - | pF |
| Coss | Output Capacitance | - | 291 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 16 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID =20A, VGS=10V | - | 37 | - | ns |
| tr | Turn-On Rise Time | - | 70 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 89 | - | ns | |
| tf | Turn-Off Fall Time | - | 49 | - | ns | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 325V, ID =20A, VGS = 10V | - | 54.5 | - | nC |
| Qgs | Gate-Source Charge | - | 13.3 | - | nC | |
| Qgd | Gate-Drain Charge | - | 18.7 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 20 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 80 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 20A | - | - | 1.4 | V |
| Trr | Body Diode Reverse Recovery Time | IS=20A,VGS=0V, di/dt=100A/us | - | 561 | - | ns |
| Qrr | Reverse Recovery Charge | - | 6.9 | - | uC | |
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