High Current N Channel Enhancement Mode MOSFET MIRACLE POWER MU0001D with Advanced Trench Technology
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Product Description
Product Overview
The MU0001D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It is 100% EAS guaranteed.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Enhancement Mode MOSFET
- Technology: Advanced Trench Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 100V, 30A | RDS(ON)(Typ.) = 23m@VGS = 10V | ||||
| EAS Guarantee | 100% EAS Guaranteed | |||||
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | 100 | V | ||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous | TC = 25C | 30 | A | ||
| ID | Drain Current-Continuous | TC = 100C | 20 | A | ||
| IDM | Drain Current-Pulsed | b | 120 | A | ||
| PD | Maximum Power Dissipation | @ TJ = 25C | 73 | W | ||
| EAS | Single Pulsed Avalanche Energy | c | 121 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.7 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 100 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 100 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 100V, VGS = 0V | - | - | 1.0 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.5 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 20A | - | 23 | 30 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 10A | - | 24 | 34 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1MHz | - | 2858 | - | pF |
| Coss | Output Capacitance | - | 127 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 100 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 30V, VGS = 10V, ID = 15A, RG = 1.8 | - | 11 | - | ns |
| tr | Turn-On Rise Time | - | 45 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 67 | - | ns | |
| tf | Turn-Off Fall Time | - | 48 | - | ns | |
| Qg | Total Gate Charge | VDS = 30V, VGS = 10V, ID = 15A | - | 66 | - | nC |
| Qgs | Gate-Source Charge | - | 10 | - | nC | |
| Qgd | Gate-Drain Charge | - | 14 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VG=VD=0V, Force Current | - | - | 30 | A |
| ISM | Maximum Pulsed Current | - | - | 120 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 30A, di/dt = 100A/s | - | 28 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 30A, di/dt = 100A/s | - | 40 | - | nC |
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