N Channel Enhancement Mode MOSFET MIRACLE POWER MS4004D with High Drain Current and Low Gate Charge

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Product Description

Product Overview

The MS4004D is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features advanced shielded-gate technology, offering excellent RDS(ON) and low gate charge. This MOSFET is guaranteed for 100% EAS and is suitable for applications such as motor controllers, DC-to-DC converters, and battery-driven electronic products, electrical equipment, and machines.

Product Attributes

Brand: Miracle Technology Co., Ltd.
Technology: Advanced Shielded-Gate Technology
Mode: N-Channel Enhancement Mode

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				40	V
VGS	Gate-Source Voltage				20	V
ID	Drain Current-Continuous	TC = 25C			120	A
ID	Drain Current-Continuous	TC = 100C			77	A
IDM	Drain Current-Pulsed				480	A
PD	Maximum Power Dissipation	@ TJ = 25C			72.7	W
EAS	Single Pulsed Avalanche Energy				306	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			1.72		C/W
RJA	Thermal Resistance, Junction to Ambient			45		C/W
Electrical Characteristics
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250A	40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 40V, VGS = 0V	-	-	1	A
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = 20V	-	-	100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250A	1.1	1.5	2.2	V
RDS(on)	Static Drain-Source On- Resistance	VGS = 10V, ID = 20A	-	2.3	2.9	m
RDS(on)	Static Drain-Source On- Resistance	VGS = 4.5V, ID = 20A	-	3.0	3.8	m
Dynamic Characteristics
Ciss	Input Capacitance	VDS = 20V, VGS = 0V, f = 1MHz	-	2800	-	pF
Coss	Output Capacitance		-	1070	-	pF
Crss	Reverse Transfer Capacitance		-	110	-	pF
On Characteristics (Switching)
td(on)	Turn-On Delay Time	VDS = 20V, VGS = 10V, ID = 20A, RG = 3	-	4	-	ns
tr	Turn-On Rise Time		-	5	-	ns
td(off)	Turn-Off Delay Time		-	35	-	ns
tf	Turn-Off Fall Time		-	11	-	ns
Qg	Total Gate Charge	VDS = 20V, VGS = 10V, ID = 20A	-	46	-	nC
Qgs	Gate-Source Charge		-	8.7	-	nC
Qgd	Gate-Drain Charge		-	5.4	-	nC
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VG=VD=0V, Force Current			120	A
ISM	Maximum Pulsed Current				480	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IS = 50A	-	0.83	-	V
Trr	Body Diode Reverse Recovery Time	IS = 20A, diS/dt = 100A/s	-	43	-	ns
Qrr	Body Diode Reverse Recovery Charge	IS = 20A, diS/dt = 100A/s	-	53	-	nC