Nexperia MJD44H11J transistor with DPAK package offering performance in power switching applications
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MJD44H11 is an NPN high power bipolar transistor designed for surface-mounted applications. It features a high thermal power dissipation capability and high energy efficiency due to reduced heat generation. This transistor offers a low collector-emitter saturation voltage and fast switching speeds, making it electrically similar to the popular MJD44H series. It is suitable for various power management applications, including load switching, linear mode voltage regulation, constant current drive for backlighting, motor drives, and relay replacement.
Product Attributes
- Brand: Nexperia
- Package Type: DPAK (SOT428C)
- Complementary PNP Transistor: MJD45H11
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | - | - | - | 80 | V |
| IC | Collector current | - | - | - | 8 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 16 | A |
| hFE | DC current gain | VCE = 1 V; IC = 2 A; Tamb = 25 C | 60 | - | - | - |
| VCEO | Collector-emitter voltage | - | - | - | 80 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 6 | V |
| IC | Collector current | - | - | - | 8 | A |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 16 | A |
| Ptot | Total power dissipation | Tmb 25 C [1] | - | - | 20 | W |
| Ptot | Total power dissipation | Tamb 25 C [2] | - | - | 1.75 | W |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-mb) | Thermal resistance from junction to mounting base | - | - | - | 6.25 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air [1] | - | - | - | 72 | K/W |
| ICES | Collector-emitter cut-off current | VCE = 64 V; VBE = 0 V; Tamb = 25 C | - | - | 1 | A |
| ICES | Collector-emitter cut-off current | VCE = 64 V; VBE = 0 V; Tj = 150 C | - | - | 50 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 1 | A |
| hFE | DC current gain | VCE = 1 V; IC = 2 A; Tamb = 25 C | 60 | - | - | - |
| hFE | DC current gain | VCE = 1 V; IC = 4 A; Tamb = 25 C | 40 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 8 A; IB = 400 mA; Tamb = 25 C | - | - | 1 | V |
| VBEsat | Base-emitter saturation voltage | IC = 8 A; IB = 800 mA; Tamb = 25 C | - | - | 1.5 | V |
| ton | Turn-on time | - | - | 300 | - | ns |
| ts | Storage time | - | - | 250 | - | ns |
| tf | Fall time | - | - | 170 | - | ns |
| toff | Turn-off time | IC = 5 A; IBon = 0.5 mA; IBoff = -0.5 mA; VCC = 12.5 V; Tamb = 25 C | - | 420 | - | ns |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 30 | pF |
| fT | Transition frequency | VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 C | - | 160 | - | MHz |
Similar Products
Get in Touch
Have questions about our products or want to discuss a custom order? Our team is ready to help you.
Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina