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power transistor Nexperia PBSS303PX115 30 volt 5.1 amp PNP low VCEsat for compact electronic designs

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Price: Negotiable
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Delivery Time: Negotiable
Product Description

Product Overview

The Nexperia PBSS303PX is a 30 V, 5.1 A PNP low VCEsat transistor designed for surface-mounted applications. It offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high collector current gain (hFE) at high IC. These features contribute to high efficiency with less heat generation and a smaller PCB area requirement compared to conventional transistors. The PBSS303PX is AEC-Q101 qualified, making it suitable for demanding applications such as DC-to-DC conversion, MOSFET gate driving, motor control, charging circuits, and power switches.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP low VCEsat transistor
  • Package Type: SOT89 (SC-62/TO-243)
  • Qualification: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -30 V
IC Collector current - - - -5.1 A
ICM Peak collector current single pulse; tp 1 ms - - -10.2 A
RCEsat Collector-emitter saturation resistance IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 32 48 m
VCBO Collector-base voltage open emitter - - -30 V
VEBO Emitter-base voltage open collector - - -5 V
Ptot Total power dissipation Tamb 25 C - - 2.1 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint - - 208 K/W
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2 - - 76 K/W
Rth(j-a) Thermal resistance from junction to ambient Device mounted on a ceramic PCB, Al2O3, standard footprint - - 60 K/W
Rth(j-sp) Thermal resistance from junction to solder point - - - 20 K/W
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICBO Collector-base cut-off current VCB = -30 V; IE = 0 A; Tj = 150 C - - -50 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -100 nA
hFE DC current gain VCE = -2 V; IC = -0.5 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 250 400 - -
hFE DC current gain VCE = -2 V; IC = -6 A; pulsed; tp 300 s; 0.02; Tamb = 25 C 100 160 - -
VCEsat Collector-emitter saturation voltage IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -130 -190 mV
VCEsat Collector-emitter saturation voltage IC = 5.1 A; IB = -255 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -160 -230 mV
RCEsat Collector-emitter saturation resistance IC = -4 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 32 48 m
VBEsat Base-emitter saturation voltage IC = -4 A; IB = -400 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - -0.93 -1.05 V
VBEon Base-emitter turn-on voltage VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C - -0.76 -0.85 V
td Delay time - - 15 - ns
tr Rise time - - 55 - ns
ton Turn-on time - - 70 - ns
ts Storage time - - 215 - ns
tf Fall time - - 105 - ns
toff Turn-off time VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A; Tamb = 25 C - 320 - ns
fT Transition frequency VCE = -10 V; IC = -0.1 A; f = 100 MHz; Tamb = 25 C - 130 - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 110 160 pF

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
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