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Nexperia BC846S115 Double Transistor NPN Type in SOT363 Package for Compact and Electronic Circuits

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Product Description

Product Overview

The Nexperia BC846S is an NPN general-purpose double transistor housed in a compact SOT363 (SC-88) plastic package. Designed for efficiency, it integrates two transistors into a single component, reducing part count and saving board space without mutual interference. This device is ideal for general-purpose switching and small-signal amplification applications.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Double Transistor
  • Package Type: SOT363 (SC-88)
  • Number of Leads: 6

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per Transistor
VCEO Collector-emitter voltage (open base) - - - 65 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 110 - - -
VCBO Collector-base voltage (open emitter) - - - 80 V
VEBO Emitter-base voltage (open collector) - - - 6 V
ICM Peak collector current - - - 200 mA
IBM Peak base current (single pulse; tp 1 ms) - - - 200 mA
Ptot Total power dissipation (Tamb 25 C) [1] - - - 220 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature -65 to 150 C - - - -
Tstg Storage temperature -65 to 150 C - - - -
Per Device
Ptot Total power dissipation (Tamb 25 C) [1] - - - 300 mW
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - - - 416 K/W
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - - - 568 K/W
Rth(j-sp) Thermal resistance junction to solder point - - - 230 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 80 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 65 - - V
V(BR)EBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 6 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 110 - - -
hFE DC current gain IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 770 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C 580 - 700 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 1.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

Ordering Information:

  • Package Type: TSSOP6
  • Name: SOT363
  • Description: Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body

Marking Code: 4F% (% = placeholder for manufacturing site code)

Package Outline Dimensions (mm):

  • See Figure 7 in the original document for detailed dimensions.

Soldering Footprint:

  • Reflow soldering footprint for TSSOP6 (SOT363) - See Figure 8.
  • Wave soldering footprint for TSSOP6 (SOT363) - See Figure 9.

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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