Motor drive enhancement mode MOSFET MIRACLE POWER MD4001X featuring rugged N channel and P channel technology
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The MD4001X is an N-channel and P-channel enhancement mode MOSFET from Miracle Technology Co., Ltd., featuring advanced Miracle Technology. This device is designed for reliability and ruggedness, with 100% EAS guaranteed. It is particularly well-suited for motor drive applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Miracle Technology
- Channel Type: N-Channel and P-Channel
- Mode: Enhancement Mode
- Reliability: Reliable and Rugged
- Testing: 100% EAS Guaranteed
Technical Specifications
| Feature | N-MOS | P-MOS | Unit |
|---|---|---|---|
| Key Features | |||
| Voltage Rating | 40V | -40V | V |
| Continuous Drain Current (TC=25C) | 20A | -15A | A |
| RDS(ON) (VGS=10V) | 18m (Typ.) | 32m (Typ.) | |
| RDS(ON) (VGS=4.5V) | 24m (Typ.) | 40m (Typ.) | |
| Absolute Maximum Ratings (TA = 25C unless otherwise noted) | |||
| Drain-Source Voltage (VDS) | 40 | -40 | V |
| Gate-Source Voltage (VGS) | 20 | 20 | V |
| Drain Current-Continuous (TC=25C) | 20 | -15 | A |
| Drain Current-Continuous (TC=100C) | 13 | -9 | A |
| Drain Current-Continuous (TA=25C) | 8 | -7 | A |
| Drain Current-Continuous (TA=70C) | 7 | -5 | A |
| Drain Current-Pulsed (IDM) | 80 | -60 | A |
| Avalanche Energy, Single pulse (EAS) | 12 | 20 | mJ |
| Avalanche Current (IAS) | 7 | -9 | A |
| Total Power Dissipation (TC=25C) | 16 | 16 | W |
| Total Power Dissipation (TC=100C) | 6 | 6 | W |
| Total Power Dissipation (TA=25C) | 2.8 | 2.8 | W |
| Total Power Dissipation (TA=70C) | 1.8 | 1.8 | W |
| Junction and Storage Temperature Range (TJ, TSTG) | -55 to 150 | C | |
| Thermal Characteristics | |||
| Thermal Resistance Junction-Case (RJC) | 7.8 | 7.8 | C/W |
| Thermal Resistance Junction-Ambient (RJA) | 45 | 45 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | |||
| Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = 250A) | 40 | - | V |
| Drain-Source Breakdown Voltage (BVDSS) (VGS = 0V, ID = -250A) | - | -40 | V |
| Zero Gate Voltage Drain Current (IDSS) (VDS = 40V, VGS = 0V) | - | 1 | A |
| Zero Gate Voltage Drain Current (IDSS) (VDS = -40V, VGS = 0V) | - | 1 | A |
| Forward Gate Body Leakage Current (IGSS) (VDS = 0V, VGS = 20V) | 100 | 100 | nA |
| Gate Threshold Voltage (VGS(th)) (VDS = VGS, ID = 250A) | 1.0 - 2.5 | 1.0 - 2.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 10V, ID = 8A) | - 25 | - 50 | m |
| Static Drain-Source On-Resistance (RDS(on)) (VGS = 4.5V, ID = 6A) | - 34 | - 60 | m |
| Input Capacitance (Ciss) (VDS = 20V, VGS = 0V, f = 1.0MHz) | 360 | 785 | pF |
| Output Capacitance (Coss) | 61 | 87 | pF |
| Reverse Transfer Capacitance (Crss) | 31 | 56 | pF |
| Turn-On Delay Time (td(on)) | 7 | 8 | ns |
| Turn-On Rise Time (tr) | 9 | 12 | ns |
| Turn-Off Delay Time (td(off)) | 16 | 30 | ns |
| Turn-Off Fall Time (tf) | 6 | 18 | ns |
| Total Gate Charge (Qg) | 8 | 18 | nC |
| Gate-Source Charge (Qgs) | 2.6 | 4.0 | nC |
| Gate-Drain Charge (Qgd) | 3.2 | 4.4 | nC |
| Drain-Source Diode Characteristics | |||
| Continuous Source Current (IS) | 20 | -15 | A |
| Pulse Source Current (ISM) | 80 | -60 | A |
| Drain-Source Diode Forward Voltage (VSD) (ISD = 1A) | - 1.3 | - | V |
| Drain-Source Diode Forward Voltage (VSD) (ISD = -1A) | - | - 1.3 | V |
| Reverse Recovery Time (trr) | 16 | 22 | ns |
| Reverse Recovery Charge (Qrr) | 29 | 34 | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina