Compact PNP PNP Double Transistor with Built in Bias Resistors Nexperia PUMB11 115 in SOT363 Package
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Delivery Time:
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Product Description
Product Overview
The Nexperia PUMB11 is a PNP/PNP resistor-equipped double transistor in a SOT363 (SC-88) SMD plastic package. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is suitable for low current peripheral drivers, control of IC inputs, and replacing general-purpose transistors in digital applications. Its NPN/PNP complement is PUMD3, and its NPN/NPN complement is PUMH11.
Product Attributes
- Brand: Nexperia
- Package Type: TSSOP6 (SOT363)
- Technology: Resistor-Equipped Transistor (RET)
- Transistor Type: PNP/PNP Double Transistor
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| IO | Output current | - | - | -100 | mA | |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | |
| VCBO | Collector-base voltage | open emitter | - | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | -10 | V |
| VI | Input voltage | positive | - | - | 10 | V |
| VI | Input voltage | negative | - | - | -40 | V |
| IO | Output current | - | - | -100 | mA | |
| Tj | Junction temperature | - | - | 150 | C | |
| Tamb | Ambient temperature | -65 | - | 150 | C | |
| Tstg | Storage temperature | -65 | - | 150 | C | |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 625 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = -100 A; IE = 0 A | -50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = -2 mA; IB = 0 A | -50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 A | |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 A | |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -400 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | -30 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.1 | -0.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -10 mA | - | -2.5 | -1.8 | V |
| R1 | Bias resistor 1 (input) | [1] | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz [2] | - | 180 | - | MHz |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Ptot | Total power dissipation | Tamb = 25 C [1] | - | - | 300 | mW |
| Rth(j-a) | Thermal resistance junction to ambient | in free air [1] | - | - | 417 | K/W |
[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor
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