N Channel MOSFET MIRACLE POWER MJD15N65 650V Breakdown Voltage 15A Drain Current for HB AHB LLC Topologies
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Product Description
Product Overview
MJD15N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., engineered with Advanced Super Junction Technology. This MOSFET offers a 650V breakdown voltage, 15A continuous drain current, and a typical on-resistance of 0.28 at VGS = 10V. It is designed for easy gate switching control and has undergone 100% avalanche testing. Its key applications include LED Lighting, LCD & PDP TV, Power Adaptors, Boost PFC Switches, and HB, AHB, or LLC Topologies.Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MJD Series
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC = 25C | 15 | A | |||
| IDM | Drain Current-Pulsed | b | 45 | A | ||
| PD | Maximum Power Dissipation @ TJ = 25C | 118 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | c | 15 | V/ns | ||
| EAS | Single Pulsed Avalanche Energy | d | 405 | mJ | ||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 1.06 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 62 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | c VGS = 10V, ID = 7.5A | - | 0.28 | 0.32 | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | f = 1.0MHz | - | 5.7 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 1020 | - | pF |
| Coss | Output Capacitance | - | 108 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.11 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 3.8A, RG= 10 | - | 8.4 | - | ns |
| tr | Turn-On Rise Time | - | 21.2 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 32.4 | - | ns | |
| tf | Turn-Off Fall Time | - | 20.8 | - | ns | |
| Qg | Total Gate Charge | VDD = 400V, VGS = 10V, ID = 3.8A | - | 22.94 | - | nC |
| Qgs | Gate-Source Charge | - | 5.7 | - | nC | |
| Qgd | Gate-Drain Charge | - | 13.6 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 15 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 45 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.74 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 2A, dIF/dt = 100A/s | - | 216 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 2A, dIF/dt = 100A/s | - | 1.3 | - | C |
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