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Low RDS ON N Channel Power MOSFET NH NSH045N100S for DC DC Converters and Motor Drive Applications

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Product Description

Product Overview

The NSH045N100S is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Niuhang Electronic Specification Technology Co., Ltd. Designed for high efficiency and speed, it features low RDS(ON) for reduced power loss and low gate charge for fast switching. Its high EAS rating ensures robust reliability. This MOSFET is ideal for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Niuhang (Trademark: NH)
  • Model ID: NSH045N100S
  • Package: TO-252
  • Certifications: RoHS COMPLIANT, Pb-Frce
  • Weight: Approx. 0.321 Grams (0.01132 Ounce)

Technical Specifications

Parameter Test Conditions Symbol Min. Typ. Max. Unit
PRODUCT SUMMARY
Drain-Source Voltage Min. @ Tj VDS 100 V
Continuous Drain Current Min. @ Ta ID 120 A
Drain-Source On Resistance Type @ 10V RDS(ON) 4.50 m
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Note 1) Ta= 25 ID 120 A
Continuous Drain Current (Note 1) Ta= 100 ID 77 A
Drain Current-Pulsed (Note 1) TJ< 150 IDM 480 A
Maximum Power Dissipation Ta= 25 PD 179 W
Power Dissipation Derating Factor Above 25 DF 1.43 W/
Power Dissipation Derating Factor Ta= 100 71 W
Junction Temperature TJ -55 150
Storage Temperature Range TSTD -55 150
Avalanche Current, Single Pulse (Note 1) L= 0.5 mH IAS 32 A
Single Pulse Avalanche Energy (Note 1) L= 0.5 mH EAS 256 mJ
Thermal Characteristics (Ta=25 Unless Otherwise Specified)
Thermal Resistance Junction To Ambient Still Air Environment With Ta =25C RJA 100.0 /W
Thermal Resistance Junction-Case Device Mounted On 1 in 2 FR-4 Board With 2oz RJC 0.7 /W
Electrical Characteristics (Ta=25 Unless Otherwise Specified)
Drain-Source Breakdown Voltage VGS=0V,ID=250uA BV DSS 100 -- -- V
Bvdss Temperature Coefficient ID=250uA,Reference25 BV DSS/T J 0.114 -- V/
Drain-Source Leakage Current VDS= 100 V,VGS=0V I DSS -- 1 uA
Gate-Body Leakage Current VGS= 20 V,VDS=0V I GSS -- 100 nA
Forward Transconductance ID= 20 A,VDS= 5 V gfs 40 -- S
Gate Threshold Voltage VGS= VDS ID=250uA V GS(TH) 2.0 3.0 4.0 V
Drain-Source On Resistance ID= 20 A,VGS= 10 V R DS(ON) 4.50 5.00 m
Drain-Source On Resistance ID= 20 A,VGS= 4.5 V R DS(ON) 5.18 6.70 m
Gate Resistance VGS=0V,VDS=0V, Freq.=1MHz R g 2.30 --
Input Capacitance VDS= 50 V C iss 4500.0 -- pF
Output Capacitance VGS= 0 V C oss 970.0 -- pF
Reverse Transfer Capacitance F= 1 MHZ C rss 30.0 -- pF
Turn-On Delay Time VDS= 50 V t d(on) 28.0 -- ns
Turn-On Rise Time VGS= 10 V t r 32.0 -- ns
Turn-Off Delay Time RG= 10 t d(off) 48.0 -- ns
Turn-Off Rise Time t f 27.0 -- ns
Total Gate Charge VDS= 50 V Q g 90.0 -- nC
Gate-Source Charge VGS= 10 V Q gs 28.0 -- nC
Gate-Drain Charge ID= 20 A Q gd 19.0 -- nC
Drain-Source Diode Characteristics And Maximum Ratings
Max. Diode Forward Current I S -- 120 A
Max. Pulsed Forward Current I SM -- 420 A
Diode Forward Voltage ID= 20 A,VGS=0V V SD 0.80 1.1 V
Reverse Recovery Time ID= 20 A,di/dt= 100 A/us t rr 80 -- ns
Reverse Recovery Charge VGS= 10 V,VDS= 50 V Q rr 190.0 -- nC
OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS
Dim. Millimeters Inches Min. Typ. Max. Min.
A 6.100 - 7.100 0.240 - 0.280
B 4.800 - 5.800 0.189 - 0.228
C 1.950 - 2.550 0.077 - 0.100
D 0.350 - 0.750 0.014 - 0.030
E 9.250 - 10.750 0.364 - 0.423
F 5.600 - 6.600 0.220 - 0.260
G 2.500 - 3.100 0.098 - 0.122
H 0.650 - 1.050 0.026 - 0.041
J 2.100 - 2.500 0.083 - 0.098
L 1.000 - 1.400 0.039 - 0.055
M 0.350 - 0.750 0.014 - 0.030
PACKING INFORMATION
Package Code Package Method Inner Box Size LWH(mm) Quantity (Pcs/Inner Box) Outer Carton Size LWH(mm) Quantity (Pcs/Carton)
TO-252 Tape Reel 34034050 5000 360x360x260 25000

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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