dependable MIRACLE POWER MS4001X N Channel Enhancement Mode MOSFET for power management solutions
Product Overview
The MS4001X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., designed for high-frequency switching and synchronous applications, including DC/DC converters. It offers a robust performance with a 40V drain-source voltage, 62A continuous drain current at 25C, and a low on-resistance of 4.4m typ. at VGS = 10V. This device is characterized by its fast switching speed, reliability, and is guaranteed 100% EAS tested, making it a dependable choice for demanding power management solutions. A green device option is available.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MS4001X
- Technology: N-Channel Enhancement Mode MOSFET
- Green Device Available: Yes
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 40 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | ± 20 | V |
| ID | Drain Current-Continuous, Tc =25C | Tc = 25C unless otherwise noted | - | - | 62 | A |
| ID | Drain Current-Continuous, Tc=100C | Tc = 25C unless otherwise noted | - | - | 39 | A |
| IDM | Drain Current-Pulsed a | Tc = 25C unless otherwise noted | - | - | 71 | A |
| EAS | Avalanche Energy, Single pulse b | Tc = 25C unless otherwise noted | - | 13 | - | mJ |
| IAS | Avalanche Current | Tc = 25C unless otherwise noted | - | 16 | - | A |
| PD | Maximum Power Dissipation @ Tc =25C | Tc = 25C unless otherwise noted | - | - | 30 | W |
| TSTG | Store Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | °C |
| TJ | Operating Junction Temperature Range | Tc = 25C unless otherwise noted | -55 | - | 150 | °C |
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance Junction-Case | Max | - | - | 4.2 | °C/W |
| RJA | Thermal Resistance Junction-Ambient | Maxc | - | - | 60 | °C/W |
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 40 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V | - | - | 1 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250µA | 1 | - | 2.2 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 20A | - | 4.4 | 5.3 | mΩ |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 4.5V, ID = 10A | - | 6.2 | 8 | mΩ |
| gfs | Forward Transconductance | VDS= 5V, ID= 10A | - | 12 | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 927 | - | pF |
| Coss | Output Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 366 | - | pF |
| Crss | Reverse Transfer Capacitance | VDS = 20V, VGS = 0V, f = 1.0MHz | - | 58 | - | pF |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDS = 25V, ID =1A, RG = 1Ω,VGS=10V | - | 8.5 | - | ns |
| tr | Turn-On Rise Time | VDS = 25V, ID =1A, RG = 1Ω,VGS=10V | - | 5.5 | - | ns |
| td(off) | Turn-Off Delay Time | VDS = 25V, ID =1A, RG = 1Ω,VGS=10V | - | 26.9 | - | ns |
| tf | Turn-Off Fall Time | VDS = 25V, ID =1A, RG = 1Ω,VGS=10V | - | 40.5 | - | ns |
| Qg | Total Gate Charge | VDS = 20V, ID = 20A, VGS = 4.5V | - | 11.6 | - | nC |
| Qg | Total Gate Charge | VDS = 20V, ID = 20A, VGS = 10V | - | 21.7 | - | nC |
| Qgs | Gate-Source Charge | VDS = 20V, ID = 20A, VGS = 10V | - | 3.2 | - | nC |
| Qgd | Gate-Drain Charge | VDS = 20V, ID = 20A, VGS = 10V | - | 6 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| RG | Gate Resistance | VDS=VGS=0V, Freq.=1MHz | - | 2.3 | - | Ω |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, ISD = 10A | - | 0.75 | 1.1 | V |
| trr | Reverse Recovery Time | IF=10A, VR=20V, di/dt=100A/us, TJ=25°C | - | 29.5 | - | ns |
| Qrr | Reverse Recovery Charge | IF=10A, VR=20V, di/dt=100A/us, TJ=25°C | - | 14.1 | - | nC |
Notes:
a: Max. current is limited by junction temperature.
b: The EAS data shows Max. Rating. The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=23A.
c: Surface Mounted on 1in² FR-4 board with 1oz.
d: Pulse test (pulse width≤300µs, duty cycle≤2%).
e: Guaranteed by design, not subject to production testing.
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